Перейти к основному содержанию
AkademIndex

Продукты

Для разработчиков

AkademBaseОткрытый API экосистемы

Alexey N. Kuznetsov

Работ: 9

Russian Academy of Sciences

  1. Investigation of p-3C-SiC/n+-6H-SiC Heterojunctions with Low Doped p-3C-SiC Region

    A. А. Lebedev, Anatoly M. Strel’chuk, N.S. Savkina +4

    СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2003Цитирований: 2
    ABI

  2. High-Quality 3C-SiC pn-Structures Created by Sublimation Epitaxy on a 6H-SiC Substrate

    Anatoly M. Strel’chuk, A. А. Lebedev, Alexey N. Kuznetsov +2

    СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2004Цитирований: 2
    ABI

  3. Characteristics of 6H-SiC Bipolar JTE Diodes Realized by Sublimation Epitaxy and Al Implantation

    Anatoly M. Strel’chuk, A. А. Lebedev, D. V. Davydov +8

    СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2004Цитирований: 1
    ABI

  4. Temperature Dependence of the Band-Edge Injection Electroluminescence of 3C-SiC pn Structure

    Anatoly M. Strel’chuk, A. А. Lebedev, N.S. Savkina +1

    СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2007Цитирований: 1
    ABI

  5. Deep Centres Appearing in 6H and 4H SiC after Proton Irradiation

    A. А. Lebedev, D. V. Davydov, Anatoly M. Strel’chuk +4

    СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2000Цитирований: 0
    ABI

  6. p-3C-SiC/n-6H-SiC Heterojunctions: Structural and Electrical Characterization

    A. А. Lebedev, Anatoly M. Strel’chuk, D. V. Davydov +5

    СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2002Цитирований: 0
    ABI

  7. Electroluminescence of p-3C-SiC/n-6H-SiC Heterodiodes, Grown by Sublimation Epitaxy in Vacuum

    A. А. Lebedev, Anatoly M. Strel’chuk, Alexey N. Kuznetsov +1

    СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2004Цитирований: 0
    ABI

  8. 6H(n<sup>+</sup>)/3C(n)/6H(p<sup>+</sup>) - SiC Structures Grown by Sublimation Epitaxy

    Anatoly M. Strel’chuk, A. А. Lebedev, A. E. Cherenkov +6

    СтатьяSilicon Carbide Semiconductor TechnologiesDiffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena2005Цитирований: 0
    ABI

  9. Growth and Investigation of n-AlGaN/p-6H-SiC/n-6H-SiC Heterostructures

    A. А. Lebedev, Oleg Ledyaev, Anatoly M. Strel’chuk +6

    СтатьяGaN-based semiconductor devices and materialsMaterials science forum2006Цитирований: 0
    ABI