Перейти к основному содержанию
AkademIndex

Продукты

Для разработчиков

AkademBaseОткрытый API экосистемы

D. V. Davydov

Работ: 8

Russian Academy of Sciences

  1. Investigation of p-3C-SiC/n+-6H-SiC Heterojunctions with Low Doped p-3C-SiC Region

    A. А. Lebedev, Anatoly M. Strel’chuk, N.S. Savkina +4

    СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2003Цитирований: 2
    ABI

  2. Doping of <i>n</i>-type 6H–SiC and 4H–SiC with defects created with a proton beam

    A. А. Lebedev, A. I. Veı̆nger, D. V. Davydov +3

    СтатьяSilicon Carbide Semiconductor TechnologiesJournal of Applied Physics2000Цитирований: 1
    ABI

  3. Characteristics of 6H-SiC Bipolar JTE Diodes Realized by Sublimation Epitaxy and Al Implantation

    Anatoly M. Strel’chuk, A. А. Lebedev, D. V. Davydov +8

    СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2004Цитирований: 1
    ABI

  4. Deep Centres Appearing in 6H and 4H SiC after Proton Irradiation

    A. А. Lebedev, D. V. Davydov, Anatoly M. Strel’chuk +4

    СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2000Цитирований: 0
    ABI

  5. p-3C-SiC/n-6H-SiC Heterojunctions: Structural and Electrical Characterization

    A. А. Lebedev, Anatoly M. Strel’chuk, D. V. Davydov +5

    СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2002Цитирований: 0
    ABI

  6. Electrical and Optical Study of 4H-SiC CVD Epitaxial Layers Irradiated with Swift Heavy Ions

    Evgenia V. Kalinina, G. Kholuyanov, Grigory Onushkin +7

    СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2003Цитирований: 0
    ABI

  7. Electrical Study of Fast Neutron Irradiated Devices Based on 4H-SiC CVD Epitaxial Layers

    Evgenia V. Kalinina, G. Kholuyanov, Anatoly M. Strel’chuk +4

    СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2004Цитирований: 0
    ABI

  8. Comparative Study of 4H-SiC Irradiated with Neutrons and Heavy Ions

    Evgenia V. Kalinina, G. Kholuyanov, Grigory Onushkin +6

    СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2005Цитирований: 0
    ABI