A. I. Veı̆nger

Работ: 1

A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg 194021, Russia

1. Doping of <i>n</i>-type 6H–SiC and 4H–SiC with defects created with a proton beam

   A. А. Lebedev, A. I. Veı̆nger, D. V. Davydov +3

   СтатьяSilicon Carbide Semiconductor TechnologiesJournal of Applied Physics2000Цитирований: 1

   ABIABI:AkademIndex/openalex/2000.article.000005