GaN-based semiconductor devices and materials

Работ: 71

The study of structure, electrophysical, physicomechanical and optical properties of GaAs with oxygen impurities and doped chromium
M. Yu. Tashmetov, Abror Abdaminov, Khabibulla Djangabaev +2
СтатьяSemiconductor Quantum Structures and DevicesPhysica B Condensed Matter2025Цитирований: 4
ABI
Changing the Voltage of the p-n Junction in a Magnetic Field
G. Gulyamov, Feruza Mukhitdinova, Gulnoza Majidova
СтатьяSemiconductor Quantum Structures and Devicese-Journal of Surface Science and Nanotechnology2023Цитирований: 2
ABI
Distribution of impurities in base-depleted region of diode temperature sensor
R. R. Bebitov, O. A. Abdulkhaev, D. M. Yodgorova +5
СтатьяChalcogenide Semiconductor Thin FilmsLow Temperature Physics2024Цитирований: 2
ABI
The effect of a heated electron on the VAX of a tunnel diode
G. Gulyamov, M. G. Dadamirzayev, K. M. Uktamova +1
СтатьяGaN-based semiconductor devices and materialsAIP conference proceedings2023Цитирований: 2
ABI
The influence of heating on the characteristics of the electron-excited conduction in gallium phosphide films
S. A. Azimov, D. A. Aronov, V. M. Rubinov +1
СтатьяSemiconductor Quantum Structures and Devicesphysica status solidi (a)1983Цитирований: 1
ABI
Effect of the band-tail states on the exciton peaks in GaN epilayers grown on sapphire substrates
Tae Won Kang, Sh. U. Yuldashev, Igor L. Bolotin +5
СтатьяGaN-based semiconductor devices and materialsJournal of Applied Physics2000Цитирований: 1
ABI
Electrical and Optical Properties of ZnO Films Grown on GaAs Substrates
Sh. U. Yuldashev, Г. Н. Панин, Sungwoo Choi +7
СтатьяZnO doping and propertiesJapanese Journal of Applied Physics2003Цитирований: 1
ABI
Growth of cubic GaN by molecular-beam epitaxy on porous GaAs substrates
V. V. Mamutin, V. P. Ulin, V. V. Tret’yakov +3
СтатьяGaN-based semiconductor devices and materialsTechnical Physics Letters1999Цитирований: 1
ABI
Influence of the AsH3 inlet pressure on the growth of epitaxial gallium arsenide layers in the GaCl-AsH3-H2 system. Range of orientation (115)A-(001)-(115)B
Г. А. Александрова, И. В. Ивонин, L. G. Lavrent’eva +2
СтатьяGaN-based semiconductor devices and materialsRussian Physics Journal1988Цитирований: 0
ABI
UHF generation in sub-micron layers of GaAs
G. F. Karavaev, Е. А. Ткаченко, E. V. Uimanov
СтатьяSemiconductor Quantum Structures and DevicesRussian Physics Journal1989Цитирований: 0
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Impact of Radiation-Induced Defects on the Yellow Luminescence Band in MOCVD GaN
V. V. Emtsev, V. Yu. Davydov, I. N. Goncharuk +7
СтатьяGaN-based semiconductor devices and materialsMaterials science forum1997Цитирований: 0
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Characteristics of stimulated emission from an optically pumped GaN/AlGaN double heterostructure
М. В. Максимов, A. V. Sakharov, W. V. Lundin +7
СтатьяGaN-based semiconductor devices and materialsTechnical Physics Letters1997Цитирований: 0
ABI
Photoluminescence properties of AlxGa1−xAs epitaxial layers grown under conditions of ultrafast flux cooling
А. В. Абрамов, A. G. Deryagin, N. G. Deryagin +5
СтатьяSemiconductor Quantum Structures and DevicesTechnical Physics Letters1997Цитирований: 0
ABI
High-temperature diode formed by epitaxial GaP layers
M. M. Sobolev, В. Г. Никитин
СтатьяSemiconductor Quantum Structures and DevicesTechnical Physics Letters1998Цитирований: 0
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HVPE GaN and AIGaN 'Substrates' for Homoepitaxy
Yu. Melnik, A. E. Nikolaev, С. И. Степанов +5
СтатьяGaN-based semiconductor devices and materialsMaterials science forum1998Цитирований: 0
ABI
GaAsN/GaAs and InGaAsN/GaAs heterostructures grown by molecular beam epitaxy
A. Yu. Egorov, A. E. Zhukov, A. R. Kovsh +7
СтатьяSemiconductor Quantum Structures and DevicesTechnical Physics Letters1998Цитирований: 0
ABI
Optical and Structural Studies of Thick AlGaN Alloy Layers and AlGaN/GaN Heterostructures on Sapphire Substrates
W. V. Lundin, A. S. Usikov, B. V. Pushnyĭ +11
СтатьяGaN-based semiconductor devices and materialsMaterials science forum1998Цитирований: 0
ABI
On the epitaxy of aluminum nitride on silicon substrates in a chloride-hydride process
A. N. Efimov, Andrew O. Lebedev, A. Tsaregorodtsev
СтатьяGaN-based semiconductor devices and materialsTechnical Physics Letters1998Цитирований: 0
ABI
Growth of GaN by molecular-beam epitaxy with activation of the nitrogen by a capacitive rf magnetron discharge
V. V. Mamutin, В. Н. Жмерик, T. V. Shubina +5
СтатьяGaN-based semiconductor devices and materialsTechnical Physics Letters1998Цитирований: 0
ABI
Electrical and Optical Properties of Highly Strained GaN Epilayers
A. S. Usikov, W. V. Lundin, B. V. Pushnyĭ +8
СтатьяGaN-based semiconductor devices and materialsMaterials science forum1998Цитирований: 0
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Lasing and Gain Mechanisms in AlGaN-GaN-Double Heterostructures: Correlation with Structural Properties
J. Holst, M. Straßburg, N. N. Ledentsov +13
СтатьяGaN-based semiconductor devices and materialsMaterials science forum1998Цитирований: 0
ABI
Apparatus for growing GaN films on large-area substrates by the method of chloride-hydride vapor-phase epitaxy
С. И. Степанов, D. Tsvetkov, A. E. Cherenkov
СтатьяGaN-based semiconductor devices and materialsTechnical Physics Letters1998Цитирований: 0
ABI
Photoluminescence of n-GaN: Influence of chemical treatment of the surface using sulfide solutions
Yu. V. Zhilyaev, M. E. Kompan, E. V. Konenkova +2
СтатьяGaN-based semiconductor devices and materialsTechnical Physics Letters1998Цитирований: 0
ABI
Lasing in the vertical direction in quantum-size InGaN/GaN multilayer heterostructures
A. V. Sakharov, W. V. Lundin, V. A. Semenov +4
СтатьяGaN-based semiconductor devices and materialsTechnical Physics Letters1999Цитирований: 0
ABI
Photoinduced self-organization of gallium nanowires on a GaN surface
D. A. Bedarev, S. O. Kognovitskiĭ, W. V. Lundin
СтатьяGaN-based semiconductor devices and materialsTechnical Physics Letters1999Цитирований: 0
ABI