Growth of cubic GaN by molecular-beam epitaxy on porous GaAs substrates

It is shown that GaN layers can be grown on (100)-and (111)-oriented porous single-crystal GaAs substrates by molecular-beam epitaxy with plasma activation of the nitrogen by an rf electron cyclotron resonance discharge. The resulting undoped epitaxial layers possessed ntype conductivity with a carrier concentration ∼1018. Data obtained by scanning electron microscopy and cathodoluminescence indicate that at thicknesses ∼2000 Å, continuous layers of the cubic GaN modification are obtained regardless of the substrate orientation.

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