S. G. Konnikov

Работ: 5

A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg,

1. Growth of cubic GaN by molecular-beam epitaxy on porous GaAs substrates

   V. V. Mamutin, V. P. Ulin, V. V. Tret’yakov +3

   СтатьяGaN-based semiconductor devices and materialsTechnical Physics Letters1999Цитирований: 1

   ABIABI:AkademIndex/openalex/2026.other.522142

2. Investigation of transient processes in YBaCuO films by low-temperature scanning electron microscopy

   V. A. Solov#x2019;ev, M. É. Gaevskii, S. G. Konnikov +2

   СтатьяPhysics of Superconductivity and MagnetismTechnical Physics Letters1997Цитирований: 0

   ABIABI:AkademIndex/openalex/1997.article.000183

3. Unstrained epitaxial InxGa1−xAs films obtained on porous GaAs

   F. Yu. Soldatenkov, V. P. Ulin, A. A. Yakovenko +3

   СтатьяSilicon Nanostructures and PhotoluminescenceTechnical Physics Letters1999Цитирований: 0

   ABIABI:AkademIndex/openalex/1999.article.000035

4. Investigation of the growth characteristics of epitaxial GaN layers on sapphire by microcathodoluminescence

   A. S. Usikov, V. V. Tret’yakov, W. V. Lundin +3

   СтатьяGaN-based semiconductor devices and materialsTechnical Physics Letters1999Цитирований: 0

   ABIABI:AkademIndex/openalex/1999.article.000218

5. Photovoltaic converters based on GaAs and AlGaAs epitaxial layers on GaAs substrates with developed surface area

   И. Н. Арсентьев, A. V. Bobyl, O. Yu. Borkovskaya +7

   Статьяsolar cell performance optimizationSemiconductors2006Цитирований: 0

   ABIABI:AkademIndex/openalex/2006.article.000306