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W. V. Lundin

Работ: 7

A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg

  1. Characteristics of stimulated emission from an optically pumped GaN/AlGaN double heterostructure

    М. В. Максимов, A. V. Sakharov, W. V. Lundin +7

    СтатьяGaN-based semiconductor devices and materialsTechnical Physics Letters1997Цитирований: 0
    ABI

  2. Optical and Structural Studies of Thick AlGaN Alloy Layers and AlGaN/GaN Heterostructures on Sapphire Substrates

    W. V. Lundin, A. S. Usikov, B. V. Pushnyĭ +11

    СтатьяGaN-based semiconductor devices and materialsMaterials science forum1998Цитирований: 0
    ABI

  3. Electrical and Optical Properties of Highly Strained GaN Epilayers

    A. S. Usikov, W. V. Lundin, B. V. Pushnyĭ +8

    СтатьяGaN-based semiconductor devices and materialsMaterials science forum1998Цитирований: 0
    ABI

  4. Lasing and Gain Mechanisms in AlGaN-GaN-Double Heterostructures: Correlation with Structural Properties

    J. Holst, M. Straßburg, N. N. Ledentsov +13

    СтатьяGaN-based semiconductor devices and materialsMaterials science forum1998Цитирований: 0
    ABI

  5. Lasing in the vertical direction in quantum-size InGaN/GaN multilayer heterostructures

    A. V. Sakharov, W. V. Lundin, V. A. Semenov +4

    СтатьяGaN-based semiconductor devices and materialsTechnical Physics Letters1999Цитирований: 0
    ABI

  6. Photoinduced self-organization of gallium nanowires on a GaN surface

    D. A. Bedarev, S. O. Kognovitskiĭ, W. V. Lundin

    СтатьяGaN-based semiconductor devices and materialsTechnical Physics Letters1999Цитирований: 0
    ABI

  7. Investigation of the growth characteristics of epitaxial GaN layers on sapphire by microcathodoluminescence

    A. S. Usikov, V. V. Tret’yakov, W. V. Lundin +3

    СтатьяGaN-based semiconductor devices and materialsTechnical Physics Letters1999Цитирований: 0
    ABI