A. S. Usikov

Работ: 5

Russian Academy of Sciences

1. Impact of Radiation-Induced Defects on the Yellow Luminescence Band in MOCVD GaN

   V. V. Emtsev, V. Yu. Davydov, I. N. Goncharuk +7

   СтатьяGaN-based semiconductor devices and materialsMaterials science forum1997Цитирований: 0

   ABIABI:AkademIndex/openalex/1997.article.000045

2. Characteristics of stimulated emission from an optically pumped GaN/AlGaN double heterostructure

   М. В. Максимов, A. V. Sakharov, W. V. Lundin +7

   СтатьяGaN-based semiconductor devices and materialsTechnical Physics Letters1997Цитирований: 0

   ABIABI:AkademIndex/openalex/1997.article.000110

3. Optical and Structural Studies of Thick AlGaN Alloy Layers and AlGaN/GaN Heterostructures on Sapphire Substrates

   W. V. Lundin, A. S. Usikov, B. V. Pushnyĭ +11

   СтатьяGaN-based semiconductor devices and materialsMaterials science forum1998Цитирований: 0

   ABIABI:AkademIndex/openalex/1998.article.000109

4. Electrical and Optical Properties of Highly Strained GaN Epilayers

   A. S. Usikov, W. V. Lundin, B. V. Pushnyĭ +8

   СтатьяGaN-based semiconductor devices and materialsMaterials science forum1998Цитирований: 0

   ABIABI:AkademIndex/openalex/1998.article.000191

5. Investigation of the growth characteristics of epitaxial GaN layers on sapphire by microcathodoluminescence

   A. S. Usikov, V. V. Tret’yakov, W. V. Lundin +3

   СтатьяGaN-based semiconductor devices and materialsTechnical Physics Letters1999Цитирований: 0

   ABIABI:AkademIndex/openalex/1999.article.000218