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A. V. Sakharov

Работ: 11

A.F.Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg

  1. Impact of Radiation-Induced Defects on the Yellow Luminescence Band in MOCVD GaN

    V. V. Emtsev, V. Yu. Davydov, I. N. Goncharuk +7

    СтатьяGaN-based semiconductor devices and materialsMaterials science forum1997Цитирований: 0
    ABI

  2. Room-temperature lasing in structures with CdSe quantum islands in a ZnMgSSe matrix without external optical confinement

    A. V. Sakharov, S. V. Ivanov, S. V. Sorokin +4

    СтатьяStrong Light-Matter InteractionsTechnical Physics Letters1997Цитирований: 0
    ABI

  3. Lasing in submonolayer CdSe structures in a ZnSe matrix without external optical confinement

    I. L. Krestnikov, N. N. Ledentsov, М. В. Максимов +6

    СтатьяSemiconductor Quantum Structures and DevicesTechnical Physics Letters1997Цитирований: 0
    ABI

  4. Characteristics of stimulated emission from an optically pumped GaN/AlGaN double heterostructure

    М. В. Максимов, A. V. Sakharov, W. V. Lundin +7

    СтатьяGaN-based semiconductor devices and materialsTechnical Physics Letters1997Цитирований: 0
    ABI

  5. Quantum-dot cw heterojunction injection laser operating at room temperature with an output power of 1 W

    Yu. M. Shernyakov, A. Yu. Egorov, A. E. Zhukov +12

    СтатьяSemiconductor Quantum Structures and DevicesTechnical Physics Letters1997Цитирований: 0
    ABI

  6. Operating characteristics and their anisotropy in a high-power laser (1.5 W, 300 K) with a quantum-dot active region

    Yu. M. Shernyakov, A. Yu. Egorov, B. V. Volovik +11

    СтатьяSemiconductor Quantum Structures and DevicesTechnical Physics Letters1998Цитирований: 0
    ABI

  7. Optical and Structural Studies of Thick AlGaN Alloy Layers and AlGaN/GaN Heterostructures on Sapphire Substrates

    W. V. Lundin, A. S. Usikov, B. V. Pushnyĭ +11

    СтатьяGaN-based semiconductor devices and materialsMaterials science forum1998Цитирований: 0
    ABI

  8. Lasing in submonolayer InAs/AlGaAs structures without external optical confinement

    B. V. Volovik, A. F. Tsatsul’nikov, N. N. Ledentsov +11

    СтатьяSemiconductor Quantum Structures and DevicesTechnical Physics Letters1998Цитирований: 0
    ABI

  9. Electrical and Optical Properties of Highly Strained GaN Epilayers

    A. S. Usikov, W. V. Lundin, B. V. Pushnyĭ +8

    СтатьяGaN-based semiconductor devices and materialsMaterials science forum1998Цитирований: 0
    ABI

  10. Lasing and Gain Mechanisms in AlGaN-GaN-Double Heterostructures: Correlation with Structural Properties

    J. Holst, M. Straßburg, N. N. Ledentsov +13

    СтатьяGaN-based semiconductor devices and materialsMaterials science forum1998Цитирований: 0
    ABI

  11. Lasing in the vertical direction in quantum-size InGaN/GaN multilayer heterostructures

    A. V. Sakharov, W. V. Lundin, V. A. Semenov +4

    СтатьяGaN-based semiconductor devices and materialsTechnical Physics Letters1999Цитирований: 0
    ABI