N. N. Ledentsov

Работ: 3

A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg

1. Lasing in submonolayer CdSe structures in a ZnSe matrix without external optical confinement

   I. L. Krestnikov, N. N. Ledentsov, М. В. Максимов +6

   СтатьяSemiconductor Quantum Structures and DevicesTechnical Physics Letters1997Цитирований: 0

   ABIABI:AkademIndex/openalex/1997.article.000098

2. Characteristics of stimulated emission from an optically pumped GaN/AlGaN double heterostructure

   М. В. Максимов, A. V. Sakharov, W. V. Lundin +7

   СтатьяGaN-based semiconductor devices and materialsTechnical Physics Letters1997Цитирований: 0

   ABIABI:AkademIndex/openalex/1997.article.000110

3. Lasing in the vertical direction in quantum-size InGaN/GaN multilayer heterostructures

   A. V. Sakharov, W. V. Lundin, V. A. Semenov +4

   СтатьяGaN-based semiconductor devices and materialsTechnical Physics Letters1999Цитирований: 0

   ABIABI:AkademIndex/openalex/1999.article.000100