Characteristics of stimulated emission from an optically pumped GaN/AlGaN double heterostructure
М. В. МаксимовA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgA. V. SakharovA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgW. V. LundinA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgA. S. UsikovA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgB. V. PushnyĭA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgI. L. KrestnikovA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgN. N. LedentsovA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgP. S. Kop’evScientific-Research Institute of Radiomaterials, MinskZh. I. AlfërovA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgV. P. RozumA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg
ABI
Аннотация
The luminescence properties of a GaN/Al0.1Ga0.9N double heterostructure grown by vapor-phase deposition from organometallic compounds are studied. When luminescence is observed from the end, the radiation intensity shows a sharply defined threshold dependence on the pump density. The threshold excitation density at T=77 K was ∼40 kW/cm2 and the wavelength of the stimulated emission was λ=357 nm. The long-wavelength shift of the emission line at high pump densities may be attributed to renormalization of the band gap caused by many-particle interactions in the electron-hole plasma.
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