Room-temperature lasing in structures with CdSe quantum islands in a ZnMgSSe matrix without external optical confinement
A. V. SakharovA.F.Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgS. V. IvanovA.F.Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgS. V. SorokinA.F.Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgI. L. KrestnikovA.F.Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgB. V. VolovikA.F.Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgN. N. LedentsovA.F.Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgP. S. Kop’evA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg,
ABI
Аннотация
It has been shown that lasing may be achieved in structures with submonolayer CdSe inclusions in a ZnMgSSe matrix at above-room temperatures without additional optical confinement of the active region by thick layers of lower refractive index. The temperature dependence of the excitation density at the lasing threshold is typical of structures with three-dimensional carrier localization.
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