V. V. Emtsev
Работ: 13
Ioffe Physicotechnical Institute, RAS, 194021 St. Petersburg, Russia
Positron probing of open vacancy volume of phosphorus‐vacancy complexes in float‐zone n‐type silicon irradiated by 0.9‐MeV electrons and by 15‐MeV protons
N.Yu. Arutyunov, V. V. Emtsev, Mohamed Elsayed +4
СтатьяMuon and positron interactions and applicationsPhysica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics2017Цитирований: 1ABIPositron annihilation lifetime in float‐zone n‐type silicon irradiated by fast electrons: a thermally stable vacancy defect
N.Yu. Arutyunov, V. V. Emtsev, R. Krause‐Rehberg +3
СтатьяMuon and positron interactions and applicationsPhysica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics2016Цитирований: 1ABI