J. Holst

Работ: 1

Technische Universität Berlin

1. Lasing and Gain Mechanisms in AlGaN-GaN-Double Heterostructures: Correlation with Structural Properties

   J. Holst, M. Straßburg, N. N. Ledentsov +13

   СтатьяGaN-based semiconductor devices and materialsMaterials science forum1998Цитирований: 0

   ABIABI:AkademIndex/openalex/1998.article.000219