A. F. Tsatsul’nikov

Работ: 5

Physicotechnical Institute

1. Low-threshold quantum-dot injection heterolaser emitting at 1.84 μm

   V. M. Ustinov, A. R. Kovsh, A. E. Zhukov +9

   СтатьяSemiconductor Quantum Structures and DevicesTechnical Physics Letters1998Цитирований: 0

   ABIABI:AkademIndex/openalex/1998.article.000030

2. GaAsN/GaAs and InGaAsN/GaAs heterostructures grown by molecular beam epitaxy

   A. Yu. Egorov, A. E. Zhukov, A. R. Kovsh +7

   СтатьяSemiconductor Quantum Structures and DevicesTechnical Physics Letters1998Цитирований: 0

   ABIABI:AkademIndex/openalex/1998.article.000107

3. Lasing in submonolayer InAs/AlGaAs structures without external optical confinement

   B. V. Volovik, A. F. Tsatsul’nikov, N. N. Ledentsov +11

   СтатьяSemiconductor Quantum Structures and DevicesTechnical Physics Letters1998Цитирований: 0

   ABIABI:AkademIndex/openalex/1998.article.000117

4. Electrical and Optical Properties of Highly Strained GaN Epilayers

   A. S. Usikov, W. V. Lundin, B. V. Pushnyĭ +8

   СтатьяGaN-based semiconductor devices and materialsMaterials science forum1998Цитирований: 0

   ABIABI:AkademIndex/openalex/1998.article.000191

5. Lasing in the vertical direction in quantum-size InGaN/GaN multilayer heterostructures

   A. V. Sakharov, W. V. Lundin, V. A. Semenov +4

   СтатьяGaN-based semiconductor devices and materialsTechnical Physics Letters1999Цитирований: 0

   ABIABI:AkademIndex/openalex/1999.article.000100