V. V. Mamutin

Работ: 3

A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg,

1. Growth of cubic GaN by molecular-beam epitaxy on porous GaAs substrates

   V. V. Mamutin, V. P. Ulin, V. V. Tret’yakov +3

   СтатьяGaN-based semiconductor devices and materialsTechnical Physics Letters1999Цитирований: 1

   ABIABI:AkademIndex/openalex/2026.other.522142

2. GaAsN/GaAs and InGaAsN/GaAs heterostructures grown by molecular beam epitaxy

   A. Yu. Egorov, A. E. Zhukov, A. R. Kovsh +7

   СтатьяSemiconductor Quantum Structures and DevicesTechnical Physics Letters1998Цитирований: 0

   ABIABI:AkademIndex/openalex/1998.article.000107

3. Growth of GaN by molecular-beam epitaxy with activation of the nitrogen by a capacitive rf magnetron discharge

   V. V. Mamutin, В. Н. Жмерик, T. V. Shubina +5

   СтатьяGaN-based semiconductor devices and materialsTechnical Physics Letters1998Цитирований: 0

   ABIABI:AkademIndex/openalex/1998.article.000162