M. G. Dadamirzayev

Работ: 4

Namangan engineering – construction institute, Islam Karimov avenue, 12, Namangan, Uzbekistan

1. Influence of deformation and light on the diffusion capacity and differential resistance of the p-n junction of a strong electromagnetic field

   G. Gulyamov, M. G. Dadamirzayev, M. O. Qosimova +1

   СтатьяSilicon and Solar Cell TechnologiesAIP conference proceedings2023Цитирований: 5

   ABIABI:AkademIndex/openalex/2026.other.338275

2. The effect of a heated electron on the VAX of a tunnel diode

   G. Gulyamov, M. G. Dadamirzayev, K. M. Uktamova +1

   СтатьяGaN-based semiconductor devices and materialsAIP conference proceedings2023Цитирований: 2

   ABIABI:AkademIndex/openalex/2026.other.385121

3. Heating of charge carriers and rectification of current in asymmetrical p-n junction in a microwave field

   M. G. Dadamirzayev

   СтатьяGyrotron and Vacuum Electronics ResearchSemiconductors2011Цитирований: 2

   ABIABI:AkademIndex/openalex/2026.other.538743

4. INFLUENCE OF REFLECTION OF PHOTOELECTRONS FROM THE SURFACE PHOTO-EMF IN THIN SEMICONDUCTOR FILMS AND COMPARE IT WITH THE BULK PHOTO-EMF

   G. Gulyams, M. G. Dadamirzayev, N. Yu. Sharibaev

   СтатьяAdvanced MEMS and NEMS TechnologiesAlternative Energy and Ecology (ISJAEE)2016Цитирований: 0

   ABIABI:AkademIndex/openalex/2016.article.000305