Перейти к основному содержанию
AkademIndex

Продукты

Для разработчиков

AkademBaseОткрытый API экосистемы
Статья

Heating of charge carriers and rectification of current in asymmetrical p-n junction in a microwave field

M. G. DadamirzayevNamangan Engineering Pedagogical Institute, Namangan, 716003, Uzbekistan
Semiconductorsjournal2011en
ABI

Аннотация

The emf U oc of hot charge carriers generated in an asymmetrical p-n junction in a microwave electromagnetic field is determined by hot holes despite the fact that the temperature of electrons is much higher than that of holes. It is established that the open-circuit voltage depends on the temperature of the carriers, which determine the total current through p-n junction.

Перевод пока недоступен

Темы

Идентификаторы

Цитирования и источники

Цитирований: 2Использованных источников: 0