A. G. Deryagin

Работ: 4

A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg

1. Polarization switching time for semiconductor laser radiation

   G. S. Sokolovskiĭ, A. G. Deryagin, V. I. Kuchinskiĭ

   СтатьяSemiconductor Lasers and Optical DevicesTechnical Physics Letters1997Цитирований: 0

   ABIABI:AkademIndex/openalex/1997.article.000114

2. Photoluminescence properties of AlxGa1−xAs epitaxial layers grown under conditions of ultrafast flux cooling

   А. В. Абрамов, A. G. Deryagin, N. G. Deryagin +5

   СтатьяSemiconductor Quantum Structures and DevicesTechnical Physics Letters1997Цитирований: 0

   ABIABI:AkademIndex/openalex/1997.article.000239

3. Properties of GaInAsSb solid solutions obtained from antimony fluxes by liquid-phase epitaxy in the spinodal decay region

   В. И. Васильев, A. G. Deryagin, V. I. Kuchinskiĭ +4

   СтатьяSemiconductor Quantum Structures and DevicesTechnical Physics Letters1998Цитирований: 0

   ABIABI:AkademIndex/openalex/1998.article.000172

4. Modulation of the polarization of semiconductor laser radiation at constant output power

   G. S. Sokolovskiĭ, A. G. Deryagin, V. I. Kuchinskiĭ

   СтатьяPhotonic and Optical DevicesTechnical Physics Letters1998Цитирований: 0

   ABIABI:AkademIndex/openalex/1998.article.000272