Polarization switching time for semiconductor laser radiation
G. S. SokolovskiĭA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgA. G. DeryaginA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgV. I. KuchinskiĭA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg
ABI
Аннотация
Expressions are derived for the polarization switching time for semiconductor laser radiation. These expressions can be used to assess the influence of the laser diode parameters on the polarization switching time of the output radiation. The results of an analysis of these expressions show that the main parameters influencing the polarization switching of the output radiation from a semiconductor laser are the nonlinear gains.
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