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O. A. Abdulkhaev

Работ: 29

Physical-Technical Institute of the Academy of Sciences of the Republic of Uzbekistan, Tashkent, Uzbekistan

  1. Potential distribution over temperature sensors of p-n junction diodes with arbitrary doping of the base region

    R. R. Bebitov, O. A. Abdulkhaev, D. M. Yodgorova +6

    СтатьяAdvanced Semiconductor Detectors and MaterialsE3S Web of Conferences2023Цитирований: 6
    ABI

  2. Error Minimization in PV Characterization When Using Unfiltered Light Sources

    Asliddin Komilov, O. A. Abdulkhaev, Yusuf Nasrullayev +2

    СтатьяPhotovoltaic System Optimization TechniquesApplied Solar Energy2024Цитирований: 4
    ABI

  3. Dependence of the accuracy of the silicon diode temperature sensors for cryogenic thermometry on the spread of their parameters

    R. R. Bebitov, O. A. Abdulkhaev, D. M. Yodgorova +5

    СтатьяCalibration and Measurement TechniquesLow Temperature Physics2023Цитирований: 4
    ABI

  4. A compensation method for measuring the junction temperature of a p +-p-n + silicon structure

    O. A. Abdulkhaev, D. M. Yodgorova, A. V. Karimov +3

    СтатьяSemiconductor materials and interfacesInstruments and Experimental Techniques2013Цитирований: 3
    ABI

  5. Features of the performance of a transient voltage suppressor in the pulsed mode

    A. Z. Rahmatov, O. A. Abdulkhaev, A. V. Karimov +1

    СтатьяPulsed Power Technology ApplicationsSemiconductors2013Цитирований: 3
    ABI

  6. Features of the temperature properties of a field-effect transistor in a current-limiting mode

    O. A. Abdulkhaev, D. M. Yodgorova, A. V. Karimov +2

    СтатьяSemiconductor materials and interfacesJournal of Engineering Physics and Thermophysics2013Цитирований: 3
    ABI

  7. Influence of neutron radiation on breakdown voltage of silicon voltage limiter

    A. Z. Rakhmatov, Д. А. Петров, A. V. Karimov +2

    СтатьяEngineering Diagnostics and ReliabilityRadioelectronics and Communications Systems2012Цитирований: 2
    ABI

  8. Spectral Correction in the Assessment of Solar Cells Efficiency: A New Method for Improving Measurement Accuracy

    O. A. Abdulkhaev, Tukhtamurod Juraev, A. Komilov +1

    СтатьяSilicon and Solar Cell TechnologiesApplied Solar Energy2024Цитирований: 2
    ABI

  9. Distribution of impurities in base-depleted region of diode temperature sensor

    R. R. Bebitov, O. A. Abdulkhaev, D. M. Yodgorova +5

    СтатьяChalcogenide Semiconductor Thin FilmsLow Temperature Physics2024Цитирований: 2
    ABI

  10. Defect Formation and Displacement of Atoms on the Surface of a LiF Crystal under Bombardment with Low-Energy Cesium Ions

    Utkirjon Sharopov, O. A. Abdulkhaev, Б. Э. Эгамбердиев +11

    СтатьяIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2024Цитирований: 2
    ABI

  11. Investigation of the heat transfer processes under the action of pulse power

    O. A. Abdulkhaev, D. M. Yodgorova, A. V. Karimov +2

    СтатьяSemiconductor materials and interfacesJournal of Engineering Physics and Thermophysics2012Цитирований: 1
    ABI

  12. Highly sensitive photodetector based on ge double-barrier punch-through structure

    O. A. Abdulkhaev, D. M. Yodgorova, A. V. Karimov +1

    СтатьяSemiconductor Quantum Structures and DevicesTechnology and design in electronic equipment2015Цитирований: 1
    ABI

  13. Limiting characteristics of silicon diode temperature sensors for determining the maximum temperature with specified measurement accuracy

    Damir Istamov, O. A. Abdulkhaev, Sh. M. Kuliyev

    СтатьяAdvanced MEMS and NEMS TechnologiesUNEC journal of engineering and applied sciences2025Цитирований: 1
    ABI

  14. Physical Principles of Photocurrent Generation in Multi-Barrier Punch-Through-Structures

    A. V. Karimov, D. M. Yodgorova, O. A. Abdulkhaev

    ГлаваSemiconductor materials and interfacesInTech eBooks2011Цитирований: 1
    ABI

  15. Control of the profile of the impurity distribution in epitaxial layers grown from a solution-melt with regulated volume and composition

    A. V. Karimov, D. M. Yodgorova, O. A. Abdulkhaev

    СтатьяSilicon and Solar Cell TechnologiesJournal of Engineering Physics and Thermophysics2011Цитирований: 1
    ABI

  16. Optic-Electrical Switches on the Basis of Modernized Multifunctional Photodiode Structures

    Kh. K. Aripov, D. M. Yodgorova, Артур Каримов +2

    СтатьяOptical and Acousto-Optic Technologies2006Цитирований: 0
    ABI

  17. Thermal model of the limiter diode

    A. Z. Rakhmatov, O. A. Abdulkhaev, A. V. Karimov +1

    СтатьяPulsed Power Technology ApplicationsJournal of Engineering Physics and Thermophysics2012Цитирований: 0
    ABI

  18. Investigation of the photoelectric characteristics of photodiode structures with silicon-based potential barriers

    O. A. Abdulkhaev, G. O. Asanova, D. M. Yodgorova +1

    СтатьяSemiconductor materials and interfacesJournal of Engineering Physics and Thermophysics2012Цитирований: 0
    ABI

  19. Features of producing an ohmic contact to frontal surfaces of photoconversion structures

    A. V. Karimov, D. M. Edgorova, A. Z. Rakhmatov +1

    СтатьяSemiconductor Quantum Structures and DevicesApplied Solar Energy2012Цитирований: 0
    ABI

  20. Three-barrier photodiode structures with joining of adjacent, barriers

    O. A. Abdulkhaev, Eh.N. Yakubov, G. O. Kamanova

    СтатьяPhotonic and Optical Devices2013Цитирований: 0
    ABI

  21. Long-channel field-effect transistor with short-channel transistor properties

    A. V. Karimov, D. M. Yodgorova, O. A. Abdulkhaev

    СтатьяSemiconductor Quantum Structures and DevicesSemiconductors2014Цитирований: 0
    ABI

  22. Electrophysical and photoelectric characteristics of a three-barrier photodiode GaAs structure

    O. A. Abdulkhaev, D. M. Yodgorova, A. V. Karimov +2

    СтатьяSemiconductor Quantum Structures and DevicesTechnology and design in electronic equipment2018Цитирований: 0
    ABI

  23. Controlling voltage drops in silicon diodes by electron irradiation and thermal treatment

    A. V. Karimov, A. Z. Rakhmatov, O. A. Abdulkhaev +3

    СтатьяPulsed Power Technology ApplicationsTechnology and design in electronic equipment2018Цитирований: 0
    ABI

  24. Electrical Properties and Photosensitivity of Multi-Barrier Photodiode Structure Based on Semi-Insulating GaAs

    O. A. Abdulkhaev, Anvar A’zamovich Yakubov, F. A. Giyasova +3

    СтатьяSemiconductor materials and interfaces2020 International Conference on Information Science and Communications Technologies (ICISCT)2020Цитирований: 0
    ABI

  25. A High Gain JFET Amplifier with Dynamic Load

    Abdulaziz Karimov, B. M. Kamanov, D. M. Yodgorova +3

    СтатьяSemiconductor Lasers and Optical Devices2020 International Conference on Information Science and Communications Technologies (ICISCT)2020Цитирований: 0
    ABI