Статья

Features of producing an ohmic contact to frontal surfaces of photoconversion structures

A. V. KarimovPhysics-Sun Applied Physics Institute, Uzbek Academy of Sciences, Tashkent, UzbekistanD. M. EdgorovaPhysics-Sun Applied Physics Institute, Uzbek Academy of Sciences, Tashkent, UzbekistanA. Z. RakhmatovOAO Foton, Tashkent, UzbekistanO. A. AbdulkhaevPhysics-Sun Applied Physics Institute, Uzbek Academy of Sciences, Tashkent, Uzbekistan

Applied Solar Energyjournal2012en

ABI

Аннотация

This paper describes a technique for producing mechanically strong and high-temperature ohmic multilayer metal contacts to silicon photoconverters.

Темы

Semiconductor Quantum Structures and Devices Semiconductor materials and interfaces Advanced Semiconductor Detectors and Materials

Идентификаторы

DOI: 10.3103/s0003701x12020119

Цитирования и источники

Цитирований: 0Использованных источников: 1

Показатели — AkademScholar · Скоро