A. Z. Rakhmatov

Работ: 15

“FOTON” Joint Stock Company, Tashkent, Uzbekistan

Potential distribution over temperature sensors of p-n junction diodes with arbitrary doping of the base region
R. R. Bebitov, O. A. Abdulkhaev, D. M. Yodgorova +6
СтатьяAdvanced Semiconductor Detectors and MaterialsE3S Web of Conferences2023Цитирований: 6
ABI
Dependence of the accuracy of the silicon diode temperature sensors for cryogenic thermometry on the spread of their parameters
R. R. Bebitov, O. A. Abdulkhaev, D. M. Yodgorova +5
СтатьяCalibration and Measurement TechniquesLow Temperature Physics2023Цитирований: 4
ABI
Influence of neutron radiation on breakdown voltage of silicon voltage limiter
A. Z. Rakhmatov, Д. А. Петров, A. V. Karimov +2
СтатьяEngineering Diagnostics and ReliabilityRadioelectronics and Communications Systems2012Цитирований: 2
ABI
Distribution of impurities in base-depleted region of diode temperature sensor
R. R. Bebitov, O. A. Abdulkhaev, D. M. Yodgorova +5
СтатьяChalcogenide Semiconductor Thin FilmsLow Temperature Physics2024Цитирований: 2
ABI
Peculiarities of influence of radiation defects on photoconductivity of silicon irradiated by fast neutrons
M. Kаrimov, Sh. Makhkamov, Sh. A. Makhmudov +6
СтатьяSilicon and Solar Cell TechnologiesApplied Solar Energy2010Цитирований: 1
ABI
Methods to decrease losses of energy generated by solar electrical modules
A. V. Karimov, D. M. Yodgorova, A. Z. Rakhmatov +1
СтатьяPhotovoltaic System Optimization TechniquesApplied Solar Energy2011Цитирований: 0
ABI
Thermal model of the limiter diode
A. Z. Rakhmatov, O. A. Abdulkhaev, A. V. Karimov +1
СтатьяPulsed Power Technology ApplicationsJournal of Engineering Physics and Thermophysics2012Цитирований: 0
ABI
Features of producing an ohmic contact to frontal surfaces of photoconversion structures
A. V. Karimov, D. M. Edgorova, A. Z. Rakhmatov +1
СтатьяSemiconductor Quantum Structures and DevicesApplied Solar Energy2012Цитирований: 0
ABI
Effect of neutron irradiation on the structure of silicon p-n junctions of voltage limiters
A. Z. Rakhmatov
СтатьяAdvancements in Semiconductor Devices and Circuit DesignSemiconductors2014Цитирований: 0
ABI
On mechanism of radiative sensitivity of power diode direct voltage drop
A. V. Karimov, A. Z. Rakhmatov, S. P. Skorniakov +3
СтатьяSemiconductor materials and interfacesRadioelectronics and Communications Systems2017Цитирований: 0
ABI
Controlling voltage drops in silicon diodes by electron irradiation and thermal treatment
A. V. Karimov, A. Z. Rakhmatov, O. A. Abdulkhaev +3
СтатьяPulsed Power Technology ApplicationsTechnology and design in electronic equipment2018Цитирований: 0
ABI
A High Gain JFET Amplifier with Dynamic Load
Abdulaziz Karimov, B. M. Kamanov, D. M. Yodgorova +3
СтатьяSemiconductor Lasers and Optical Devices2020 International Conference on Information Science and Communications Technologies (ICISCT)2020Цитирований: 0
ABI
The use of the past tensesin German and English
Yarash Ruziev, Samandar Khudoev, A. Z. Rakhmatov
СтатьяLexicography and Language StudiesACADEMICIA An International Multidisciplinary Research Journal2021Цитирований: 0
ABI
The Effect of Atmospheric Oxide Thermodesorption on Negative-Ion Atomic and Cluster Sputtering of Silicon Single Crystal by Cesium Ions
Б.Г. Атабаев, R. Djabbarganov, A. S. Khalmatov +2
СтатьяIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2024Цитирований: 0
ABI
The effect of atmospheric oxide thermodesorption on negative-ion atomic and cluster sputtering of silicon single crystal by cesium ions
Б.Г. Атабаев, R. Djabbarganov, A. S. Khalmatov +2
СтатьяIon-surface interactions and analysisПоверхность Рентгеновские синхротронные и нейтронные исследования2024Цитирований: 0
ABI