S. P. Skorniakov

Работ: 1

Novosibirsk Plant of Semiconductor Devices, Novosibirsk, Russia

1. On mechanism of radiative sensitivity of power diode direct voltage drop

   A. V. Karimov, A. Z. Rakhmatov, S. P. Skorniakov +3

   СтатьяSemiconductor materials and interfacesRadioelectronics and Communications Systems2017Цитирований: 0

   ABIABI:AkademIndex/openalex/2017.article.000665