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D. M. Edgorova

Работ: 7

Tashkent State Technical University, Tashkent, Republic of Uzbekistan

  1. Bilaterally Sensitive Photodiode Structures in the System Gallium Arsenide–Cadmium Sulfide

    Kutbiddin Ilovitddinovich Vakhobov, A. V. Karimov, Abdumalik Gaibov +2

    СтатьяAdvanced Semiconductor Detectors and MaterialsJournal of Engineering Physics and Thermophysics2003Цитирований: 1
    ABI

  2. Influence of the thickness of the base region of structures with a Schottky barrier on their current and photoelectric characteristics

    D. M. Edgorova

    СтатьяSemiconductor materials and interfacesJournal of Engineering Physics and Thermophysics2007Цитирований: 1
    ABI

  3. Photophysical characteristics of microlayer photodiode pAlGaInAs(Zn)-nGaAs-Au structures

    D. M. Edgorova, F. M. Ashrapov

    СтатьяSemiconductor Quantum Structures and DevicesJournal of Engineering Physics and Thermophysics2007Цитирований: 1
    ABI

  4. A method for determining the thermal EMF and thermal conductivity

    D. M. Edgorova, S. S. Dzhakhanov, A. V. Karimov +1

    СтатьяElectric Power Systems and ControlInstruments and Experimental Techniques2006Цитирований: 0
    ABI

  5. Functional possibilities of Ag-N 0AlGaAs-n +GaAs-n 0GaInAs-au structures with an isotype base region

    A. V. Karimov, D. M. Edgorova, F. A. Giyasova +1

    СтатьяSemiconductor materials and interfacesJournal of Engineering Physics and Thermophysics2008Цитирований: 0
    ABI

  6. Photocurrent amplification effect of the fet gate p–n junction

    D. M. Edgorova

    СтатьяPhotoreceptor and optogenetics researchJournal of Engineering Physics and Thermophysics2009Цитирований: 0
    ABI

  7. Features of producing an ohmic contact to frontal surfaces of photoconversion structures

    A. V. Karimov, D. M. Edgorova, A. Z. Rakhmatov +1

    СтатьяSemiconductor Quantum Structures and DevicesApplied Solar Energy2012Цитирований: 0
    ABI