F. M. Ashrapov

Работ: 2

Physical-Engineering Institute, Physics-Sun Research and Production Association, Academy of Sciences of the Republic of Uzbekistan, 26 Mavlyanov Str., Tashkent, 700084, Uzbekistan

1. Photophysical characteristics of microlayer photodiode pAlGaInAs(Zn)-nGaAs-Au structures

   D. M. Edgorova, F. M. Ashrapov

   СтатьяSemiconductor Quantum Structures and DevicesJournal of Engineering Physics and Thermophysics2007Цитирований: 1

   ABIABI:AkademIndex/openalex/2007.article.000273

2. Research impurity of a photoeffect in two-barrier p-n-m-structure

   D. М. Yodgorova, F. M. Ashrapov

   СтатьяSemiconductor materials and interfacesDOAJ (DOAJ: Directory of Open Access Journals)2006Цитирований: 0

   ABIABI:AkademIndex/openalex/2006.article.000450