Sh. M. Kuliyev

Работ: 6

Physical-Technical Institute of Uzbekistan Academy of Sciences 1 , Tashkent 100084, Uzbekistan

1. Dependence of the accuracy of the silicon diode temperature sensors for cryogenic thermometry on the spread of their parameters

   R. R. Bebitov, O. A. Abdulkhaev, D. M. Yodgorova +5

   СтатьяCalibration and Measurement TechniquesLow Temperature Physics2023Цитирований: 4

   ABIABI:AkademIndex/openalex/2026.other.437743

2. Distribution of impurities in base-depleted region of diode temperature sensor

   R. R. Bebitov, O. A. Abdulkhaev, D. M. Yodgorova +5

   СтатьяChalcogenide Semiconductor Thin FilmsLow Temperature Physics2024Цитирований: 2

   ABIABI:AkademIndex/openalex/2024.article.002075

3. Highly sensitive photodetector based on ge double-barrier punch-through structure

   O. A. Abdulkhaev, D. M. Yodgorova, A. V. Karimov +1

   СтатьяSemiconductor Quantum Structures and DevicesTechnology and design in electronic equipment2015Цитирований: 1

   ABIABI:AkademIndex/openalex/2015.article.000359

4. Limiting characteristics of silicon diode temperature sensors for determining the maximum temperature with specified measurement accuracy

   Damir Istamov, O. A. Abdulkhaev, Sh. M. Kuliyev

   СтатьяAdvanced MEMS and NEMS TechnologiesUNEC journal of engineering and applied sciences2025Цитирований: 1

   ABIABI:AkademIndex/openalex/2025.article.003055

5. Electrophysical and photoelectric characteristics of a three-barrier photodiode GaAs structure

   O. A. Abdulkhaev, D. M. Yodgorova, A. V. Karimov +2

   СтатьяSemiconductor Quantum Structures and DevicesTechnology and design in electronic equipment2018Цитирований: 0

   ABIABI:AkademIndex/openalex/2018.article.000896

6. Controlling voltage drops in silicon diodes by electron irradiation and thermal treatment

   A. V. Karimov, A. Z. Rakhmatov, O. A. Abdulkhaev +3

   СтатьяPulsed Power Technology ApplicationsTechnology and design in electronic equipment2018Цитирований: 0

   ABIABI:AkademIndex/openalex/2018.article.000902