Б. Э. Эгамбердиев
Работ: 19
Technical University of Tashkent, 100095, Tashkent, Uzbekistan
Defect Formation and Displacement of Atoms on the Surface of a LiF Crystal under Bombardment with Low-Energy Cesium Ions
Utkirjon Sharopov, O. A. Abdulkhaev, Б. Э. Эгамбердиев +11
СтатьяIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2024Цитирований: 2ABIObtaining films of CoSi2/Si (100) and the analysis of their morphology and stoichiometry through molecular-beam, solid-phase and reactive epitaxy methods
Б. Э. Эгамбердиев, B. Ch. Holliev, A. S. Mallaev +2
СтатьяSemiconductor materials and interfacesSurface Engineering and Applied Electrochemistry2007Цитирований: 0ABIInvestigation of profiles of the distribution of ion-implanted Mn atoms using the rutherford back scattering method and the influence of thermal annealing on them
Б. Э. Эгамбердиев, Б.Ч. Холлиев, A. S. Mallaev
СтатьяIon-surface interactions and analysisSurface Engineering and Applied Electrochemistry2007Цитирований: 0ABIDISTRIBUTION PROFILES ON THE CRYSTAL STRUCTURE OF THE SURFACE AND AT THE SURFACE OF SILICON DOPED WITH IONS FROM THERMAL ANNEALING OF IRON AND COBALT
Б. Э. Эгамбердиев, Sh. A. Sayfulloev, A. S. Mallaev
СтатьяSemiconductor materials and interfacesJournalNX - A Multidisciplinary Peer Reviewed Journal2021Цитирований: 0ABIDetermining the Effect of Annealing on the Crystal Structure of CoSi2/Si (100) Formed by MBE, SSE and RE Epitaxy Techniques
Б. Э. Эгамбердиев, A. Sh. Mavlyanov, Sh. A. Sayfulloyev
ГлаваSemiconductor materials and interfacesBook Publisher International (a part of SCIENCEDOMAIN International)2021Цитирований: 0ABI