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Б. Э. Эгамбердиев

Работ: 19

Technical University of Tashkent, 100095, Tashkent, Uzbekistan

  1. Comparison of electron irradiation on the formation of surface defects in situ and post thin-film LiF/Si(111) deposition

    U. B. Sharopov, Kulwinder Kaur, М. К. Курбанов +4

    СтатьяSemiconductor materials and devicesThin Solid Films2021Цитирований: 13
    ABI

  2. Comparative research fluorine and colloidal aggregate formation on the surface lithium fluoride thin films during electronic, ionic and thermal treatments

    Utkirjon Sharopov, Abduzokhidkhuja Abdusalomov, Alisher Kakhramonov +10

    СтатьяGa2O3 and related materialsVacuum2023Цитирований: 10
    ABI

  3. Formation of defects on the surface of LiF crystals under irradiation with different ions mass

    Utkirjon Sharopov, Umid Gopparov, K. Yu. Rashidov +8

    СтатьяIon-surface interactions and analysisRadiation effects and defects in solids2022Цитирований: 9
    ABI

  4. The effect of silicon-germanium microheterojunctions on the parameters of silicon solar cells

    Б. А. Абдурахманов, Х. М. Илиев, С. А. Тачилин +2

    СтатьяSilicon and Solar Cell TechnologiesSurface Engineering and Applied Electrochemistry2010Цитирований: 7
    ABI

  5. Effect of annealing on the crystal structure of the surface of silicon doped with Ni, Fe, and Co ions

    Б. Э. Эгамбердиев, N. T. Rustamov, A. S. Mallaev +1

    СтатьяSilicon and Solar Cell TechnologiesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2015Цитирований: 6
    ABI

  6. Influence of the irradiation of ions of different mass on the formation of surface defects of lithium fluoride thin films

    Utkirjon Sharopov, Kulwinder Kaur, М. К. Курбанов +5

    СтатьяIon-surface interactions and analysisSurface and Interface Analysis2022Цитирований: 6
    ABI

  7. Influence of Doping with Rare Earth Elements on the Parameters of Silicon Photocells

    Б. Э. Эгамбердиев, Sh. B. Utamurodova, С. А. Тачилин +6

    СтатьяSilicon and Solar Cell TechnologiesApplied Solar Energy2022Цитирований: 6
    ABI

  8. The Result of Successive Exposure to Reverse and Forward Bias on the Electrophysical Characteristics of ZnO:Al/i-ZnO/CdS/CuIn1 – xGax(S, Se)2/Mo Structure Solar Cells

    A. Komilov, Б. Э. Эгамбердиев, R. R. Kabulov +2

    СтатьяChalcogenide Semiconductor Thin FilmsApplied Solar Energy2022Цитирований: 3
    ABI

  9. Manganese depth-concentration profiles in ion-implanted silicon studied by Rutherford backscattering

    Б. Э. Эгамбердиев, M. Yu. Adylov

    СтатьяIon-surface interactions and analysisTechnical Physics Letters2001Цитирований: 2
    ABI

  10. Defect Formation and Displacement of Atoms on the Surface of a LiF Crystal under Bombardment with Low-Energy Cesium Ions

    Utkirjon Sharopov, O. A. Abdulkhaev, Б. Э. Эгамбердиев +11

    СтатьяIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2024Цитирований: 2
    ABI

  11. Study of the Distribution Profile for Nickel Implanted in Silicon and the Effect of Annealing on the Structure

    Б. Э. Эгамбердиев, A. A. Akbarov

    СтатьяSilicon and Solar Cell TechnologiesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2021Цитирований: 2
    ABI

  12. Nanostructured Nd-Fe-B permanent magnets via chemical synthesis: Challenging physical fabrication methods

    Odiljon Abdurakhmonov, Sherzod Abdurakhmonov, Tukhtamurod Juraev +4

    СтатьяMagnetic Properties of AlloysMaterials Chemistry and Physics2025Цитирований: 1
    ABI

  13. Obtaining films of CoSi2/Si (100) and the analysis of their morphology and stoichiometry through molecular-beam, solid-phase and reactive epitaxy methods

    Б. Э. Эгамбердиев, B. Ch. Holliev, A. S. Mallaev +2

    СтатьяSemiconductor materials and interfacesSurface Engineering and Applied Electrochemistry2007Цитирований: 0
    ABI

  14. Investigation of profiles of the distribution of ion-implanted Mn atoms using the rutherford back scattering method and the influence of thermal annealing on them

    Б. Э. Эгамбердиев, Б.Ч. Холлиев, A. S. Mallaev

    СтатьяIon-surface interactions and analysisSurface Engineering and Applied Electrochemistry2007Цитирований: 0
    ABI

  15. DISTRIBUTION PROFILES ON THE CRYSTAL STRUCTURE OF THE SURFACE AND AT THE SURFACE OF SILICON DOPED WITH IONS FROM THERMAL ANNEALING OF IRON AND COBALT

    Б. Э. Эгамбердиев, Sh. A. Sayfulloev, A. S. Mallaev

    СтатьяSemiconductor materials and interfacesJournalNX - A Multidisciplinary Peer Reviewed Journal2021Цитирований: 0
    ABI

  16. Study of the iron distribution profile and the influence of annealing on the structure implanted in silicon

    Б. Э. Эгамбердиев, A. S. Mallayev, Sh. A. Sayfulloev +1

    СтатьяSilicon and Solar Cell TechnologiesAIP conference proceedings2021Цитирований: 0
    ABI

  17. Determining the Effect of Annealing on the Crystal Structure of CoSi2/Si (100) Formed by MBE, SSE and RE Epitaxy Techniques

    Б. Э. Эгамбердиев, A. Sh. Mavlyanov, Sh. A. Sayfulloyev

    ГлаваSemiconductor materials and interfacesBook Publisher International (a part of SCIENCEDOMAIN International)2021Цитирований: 0
    ABI

  18. HYBRID DISTRIBUTED ENERGY GENERATION SYSTEM

    N. T. Rustamov, Б. Э. Эгамбердиев, O. D. Meirbekova +1

    СтатьяHybrid Renewable Energy SystemsEuropean Journal of Technical and Natural Sciences2023Цитирований: 0
    ABI

  19. STUDY OF THE DISTRIBUTION PROFILE OF ION- IMPLANTED IN SILICON AND INFLUENCE THERMAL ANNEALING ON THE STRUCTYRE OF IRON SILICIDES

    Б. Э. Эгамбердиев, A. S. Mallaev, Shohruh SAYFULLOEV

    СтатьяSilicon and Solar Cell TechnologiesŬzMU habarlari.2024Цитирований: 0
    ABI