The Result of Successive Exposure to Reverse and Forward Bias on the Electrophysical Characteristics of ZnO:Al/i-ZnO/CdS/CuIn1 – xGax(S, Se)2/Mo Structure Solar Cells

The article presents the results of studies on the effect of forward bias on the parameters of solar cells with the ZnO:Al/i-ZnO/CdS/CuIn1 – xGax(S,Se)2/Mo structure, which were previously subjected to reverse bias for 600 s. The results of studies of the current–voltage (I–V) characteristics of copper, indium, gallium, and selenide (CIGS) solar cells (SCs), before and after exposure to forward bias, indicate a difference in the effect of forward bias from exposure to long-term illumination, in which there is a restoration of parameters that have changed during reverse bias. Although the effect of forward bias is in some sense considered identical to the operation of a SC under illumination, when exposed to forward bias, further deterioration of the electrophysical parameters of the SC is observed, which can be interpreted on the basis of the charge state rearrangement model.

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