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Работ: 24
Работа: The Result of Successive Exposure to Reverse and Forward Bias on the Electrophysical Characteristics of ZnO:Al/i-ZnO/CdS/CuIn1 – xGax(S, Se)2/Mo Structure Solar Cells
Solar cell efficiency tables (version 54)
Martin A. Green, Ewan D. Dunlop, Dean H. Levi +3
Статья2019Цитирований: 4ABILarge-Lattice-Relaxation Model for Persistent Photoconductivity in Compound Semiconductors
Статья1977Цитирований: 3ABICd-Free Cu(In,Ga)(Se,S)<sub>2</sub> Thin-Film Solar Cell With Record Efficiency of 23.35%
Motoshi Nakamura, Koji Yamaguchi, Yoshinori Kimoto +3
Статья2019Цитирований: 2ABIUnderstanding defect-related issues limiting efficiency of CIGS solar cells
M. Igalson, P. Zabierowski, D. Prządo +3
Статья2009Цитирований: 2ABIThe electronic structure of chalcopyrites—bands, point defects and grain boundaries
Susanne Siebentritt, M. Igalson, Clas Persson +1
Статья2010Цитирований: 2ABIIdentification and analysis of partial shading breakdown sites in CuInxGa(1-x)Se2 modules
Elizabeth Palmiotti, Steve Johnston, Andreas Gerber +5
Статья2017Цитирований: 2ABI