Study of the Distribution Profile for Nickel Implanted in Silicon and the Effect of Annealing on the Structure

The results of studying the profiles of the distribution of nickel atoms implanted in silicon by the Rutherford backscattering method depending on the irradiation dose and annealing temperature are presented. The effect of thermal annealing on the distribution of nickel and, in particular, oxygen is studied. It is proved that under certain conditions of heat treatment and radiation doses, so-called epitaxial silicides are formed on the surface of a single crystal, which can play the role of conducting layers or metal coatings. The possibility of using the Rutherford backscattering method for analyzing both the distribution of the concentration of dopants and their interaction is noted.

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