Skip to main content
AkademIndex

Products

For developers

AkademBaseOpen API for the ecosystem

Б. Э. Эгамбердиев

19 works

Technical University of Tashkent, 100095, Tashkent, Uzbekistan

  1. Comparison of electron irradiation on the formation of surface defects in situ and post thin-film LiF/Si(111) deposition

    U. B. Sharopov, Kulwinder Kaur, М. К. Курбанов +4

    ArticleSemiconductor materials and devicesThin Solid Films202113 citations
    ABI

  2. Comparative research fluorine and colloidal aggregate formation on the surface lithium fluoride thin films during electronic, ionic and thermal treatments

    Utkirjon Sharopov, Abduzokhidkhuja Abdusalomov, Alisher Kakhramonov +10

    ArticleGa2O3 and related materialsVacuum202310 citations
    ABI

  3. Formation of defects on the surface of LiF crystals under irradiation with different ions mass

    Utkirjon Sharopov, Umid Gopparov, K. Yu. Rashidov +8

    ArticleIon-surface interactions and analysisRadiation effects and defects in solids20229 citations
    ABI

  4. The effect of silicon-germanium microheterojunctions on the parameters of silicon solar cells

    Б. А. Абдурахманов, Х. М. Илиев, С. А. Тачилин +2

    ArticleSilicon and Solar Cell TechnologiesSurface Engineering and Applied Electrochemistry20107 citations
    ABI

  5. Effect of annealing on the crystal structure of the surface of silicon doped with Ni, Fe, and Co ions

    Б. Э. Эгамбердиев, N. T. Rustamov, A. S. Mallaev +1

    ArticleSilicon and Solar Cell TechnologiesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20156 citations
    ABI

  6. Influence of the irradiation of ions of different mass on the formation of surface defects of lithium fluoride thin films

    Utkirjon Sharopov, Kulwinder Kaur, М. К. Курбанов +5

    ArticleIon-surface interactions and analysisSurface and Interface Analysis20226 citations
    ABI

  7. Influence of Doping with Rare Earth Elements on the Parameters of Silicon Photocells

    Б. Э. Эгамбердиев, Sh. B. Utamurodova, С. А. Тачилин +6

    ArticleSilicon and Solar Cell TechnologiesApplied Solar Energy20226 citations
    ABI

  8. The Result of Successive Exposure to Reverse and Forward Bias on the Electrophysical Characteristics of ZnO:Al/i-ZnO/CdS/CuIn1 – xGax(S, Se)2/Mo Structure Solar Cells

    A. Komilov, Б. Э. Эгамбердиев, R. R. Kabulov +2

    ArticleChalcogenide Semiconductor Thin FilmsApplied Solar Energy20223 citations
    ABI

  9. Manganese depth-concentration profiles in ion-implanted silicon studied by Rutherford backscattering

    Б. Э. Эгамбердиев, M. Yu. Adylov

    ArticleIon-surface interactions and analysisTechnical Physics Letters20012 citations
    ABI

  10. Defect Formation and Displacement of Atoms on the Surface of a LiF Crystal under Bombardment with Low-Energy Cesium Ions

    Utkirjon Sharopov, O. A. Abdulkhaev, Б. Э. Эгамбердиев +11

    ArticleIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20242 citations
    ABI

  11. Study of the Distribution Profile for Nickel Implanted in Silicon and the Effect of Annealing on the Structure

    Б. Э. Эгамбердиев, A. A. Akbarov

    ArticleSilicon and Solar Cell TechnologiesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20212 citations
    ABI

  12. Nanostructured Nd-Fe-B permanent magnets via chemical synthesis: Challenging physical fabrication methods

    Odiljon Abdurakhmonov, Sherzod Abdurakhmonov, Tukhtamurod Juraev +4

    ArticleMagnetic Properties of AlloysMaterials Chemistry and Physics20251 citations
    ABI

  13. Obtaining films of CoSi2/Si (100) and the analysis of their morphology and stoichiometry through molecular-beam, solid-phase and reactive epitaxy methods

    Б. Э. Эгамбердиев, B. Ch. Holliev, A. S. Mallaev +2

    ArticleSemiconductor materials and interfacesSurface Engineering and Applied Electrochemistry20070 citations
    ABI

  14. Investigation of profiles of the distribution of ion-implanted Mn atoms using the rutherford back scattering method and the influence of thermal annealing on them

    Б. Э. Эгамбердиев, Б.Ч. Холлиев, A. S. Mallaev

    ArticleIon-surface interactions and analysisSurface Engineering and Applied Electrochemistry20070 citations
    ABI

  15. DISTRIBUTION PROFILES ON THE CRYSTAL STRUCTURE OF THE SURFACE AND AT THE SURFACE OF SILICON DOPED WITH IONS FROM THERMAL ANNEALING OF IRON AND COBALT

    Б. Э. Эгамбердиев, Sh. A. Sayfulloev, A. S. Mallaev

    ArticleSemiconductor materials and interfacesJournalNX - A Multidisciplinary Peer Reviewed Journal20210 citations
    ABI

  16. Study of the iron distribution profile and the influence of annealing on the structure implanted in silicon

    Б. Э. Эгамбердиев, A. S. Mallayev, Sh. A. Sayfulloev +1

    ArticleSilicon and Solar Cell TechnologiesAIP conference proceedings20210 citations
    ABI

  17. Determining the Effect of Annealing on the Crystal Structure of CoSi2/Si (100) Formed by MBE, SSE and RE Epitaxy Techniques

    Б. Э. Эгамбердиев, A. Sh. Mavlyanov, Sh. A. Sayfulloyev

    ChapterSemiconductor materials and interfacesBook Publisher International (a part of SCIENCEDOMAIN International)20210 citations
    ABI

  18. HYBRID DISTRIBUTED ENERGY GENERATION SYSTEM

    N. T. Rustamov, Б. Э. Эгамбердиев, O. D. Meirbekova +1

    ArticleHybrid Renewable Energy SystemsEuropean Journal of Technical and Natural Sciences20230 citations
    ABI

  19. STUDY OF THE DISTRIBUTION PROFILE OF ION- IMPLANTED IN SILICON AND INFLUENCE THERMAL ANNEALING ON THE STRUCTYRE OF IRON SILICIDES

    Б. Э. Эгамбердиев, A. S. Mallaev, Shohruh SAYFULLOEV

    ArticleSilicon and Solar Cell TechnologiesŬzMU habarlari.20240 citations
    ABI