Obtaining films of CoSi2/Si (100) and the analysis of their morphology and stoichiometry through molecular-beam, solid-phase and reactive epitaxy methods
Б. Э. ЭгамбердиевTashkent State Technical University, ul. Universitetskaya 2, Tashkent, 700095, Republic of UzbekistanB. Ch. HollievTashkent State Technical University, ul. Universitetskaya 2, Tashkent, 700095, Republic of UzbekistanA. S. MallaevTashkent State Technical University, ul. Universitetskaya 2, Tashkent, 700095, Republic of UzbekistanM. E. ZoirovaTashkent State Technical University, ul. Universitetskaya 2, Tashkent, 700095, Republic of UzbekistanА. ЭшонхоновTashkent State Technical University, ul. Universitetskaya 2, Tashkent, 700095, Republic of Uzbekistan
ABI
Abstract
The results of studying the processes of thin CoSi2 film formation on Si (100) surfaces by MBE, SPE, and RE methods are presented. The regularities of the initial stage of CoSi2 film growth are studied. Stoichiometry of CoSi2 film is analyzed by the Auger electron spectroscopy method. The results of investigation show strong dependence of the morphological and electrophysical properties of CoSi2/Si (100) structures on the growth conditions. The measurements of the surface resistance show that the resistance of the CoSi2 film grown at T > 600°C changes under different growth conditions.
Topics
Identifiers
Citations and references
Cited by 05 references
Metrics — AkademScholar · Coming soon