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Б. Э. Эгамбердиев

19 та иш

Technical University of Tashkent, 100095, Tashkent, Uzbekistan

  1. Comparison of electron irradiation on the formation of surface defects in situ and post thin-film LiF/Si(111) deposition

    U. B. Sharopov, Kulwinder Kaur, М. К. Курбанов +4

    МақолаSemiconductor materials and devicesThin Solid Films202113 иқтибос
    ABI

  2. Comparative research fluorine and colloidal aggregate formation on the surface lithium fluoride thin films during electronic, ionic and thermal treatments

    Utkirjon Sharopov, Abduzokhidkhuja Abdusalomov, Alisher Kakhramonov +10

    МақолаGa2O3 and related materialsVacuum202310 иқтибос
    ABI

  3. Formation of defects on the surface of LiF crystals under irradiation with different ions mass

    Utkirjon Sharopov, Umid Gopparov, K. Yu. Rashidov +8

    МақолаIon-surface interactions and analysisRadiation effects and defects in solids20229 иқтибос
    ABI

  4. The effect of silicon-germanium microheterojunctions on the parameters of silicon solar cells

    Б. А. Абдурахманов, Х. М. Илиев, С. А. Тачилин +2

    МақолаSilicon and Solar Cell TechnologiesSurface Engineering and Applied Electrochemistry20107 иқтибос
    ABI

  5. Effect of annealing on the crystal structure of the surface of silicon doped with Ni, Fe, and Co ions

    Б. Э. Эгамбердиев, N. T. Rustamov, A. S. Mallaev +1

    МақолаSilicon and Solar Cell TechnologiesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20156 иқтибос
    ABI

  6. Influence of the irradiation of ions of different mass on the formation of surface defects of lithium fluoride thin films

    Utkirjon Sharopov, Kulwinder Kaur, М. К. Курбанов +5

    МақолаIon-surface interactions and analysisSurface and Interface Analysis20226 иқтибос
    ABI

  7. Influence of Doping with Rare Earth Elements on the Parameters of Silicon Photocells

    Б. Э. Эгамбердиев, Sh. B. Utamurodova, С. А. Тачилин +6

    МақолаSilicon and Solar Cell TechnologiesApplied Solar Energy20226 иқтибос
    ABI

  8. The Result of Successive Exposure to Reverse and Forward Bias on the Electrophysical Characteristics of ZnO:Al/i-ZnO/CdS/CuIn1 – xGax(S, Se)2/Mo Structure Solar Cells

    A. Komilov, Б. Э. Эгамбердиев, R. R. Kabulov +2

    МақолаChalcogenide Semiconductor Thin FilmsApplied Solar Energy20223 иқтибос
    ABI

  9. Manganese depth-concentration profiles in ion-implanted silicon studied by Rutherford backscattering

    Б. Э. Эгамбердиев, M. Yu. Adylov

    МақолаIon-surface interactions and analysisTechnical Physics Letters20012 иқтибос
    ABI

  10. Defect Formation and Displacement of Atoms on the Surface of a LiF Crystal under Bombardment with Low-Energy Cesium Ions

    Utkirjon Sharopov, O. A. Abdulkhaev, Б. Э. Эгамбердиев +11

    МақолаIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20242 иқтибос
    ABI

  11. Study of the Distribution Profile for Nickel Implanted in Silicon and the Effect of Annealing on the Structure

    Б. Э. Эгамбердиев, A. A. Akbarov

    МақолаSilicon and Solar Cell TechnologiesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20212 иқтибос
    ABI

  12. Nanostructured Nd-Fe-B permanent magnets via chemical synthesis: Challenging physical fabrication methods

    Odiljon Abdurakhmonov, Sherzod Abdurakhmonov, Tukhtamurod Juraev +4

    МақолаMagnetic Properties of AlloysMaterials Chemistry and Physics20251 иқтибос
    ABI

  13. Obtaining films of CoSi2/Si (100) and the analysis of their morphology and stoichiometry through molecular-beam, solid-phase and reactive epitaxy methods

    Б. Э. Эгамбердиев, B. Ch. Holliev, A. S. Mallaev +2

    МақолаSemiconductor materials and interfacesSurface Engineering and Applied Electrochemistry20070 иқтибос
    ABI

  14. Investigation of profiles of the distribution of ion-implanted Mn atoms using the rutherford back scattering method and the influence of thermal annealing on them

    Б. Э. Эгамбердиев, Б.Ч. Холлиев, A. S. Mallaev

    МақолаIon-surface interactions and analysisSurface Engineering and Applied Electrochemistry20070 иқтибос
    ABI

  15. DISTRIBUTION PROFILES ON THE CRYSTAL STRUCTURE OF THE SURFACE AND AT THE SURFACE OF SILICON DOPED WITH IONS FROM THERMAL ANNEALING OF IRON AND COBALT

    Б. Э. Эгамбердиев, Sh. A. Sayfulloev, A. S. Mallaev

    МақолаSemiconductor materials and interfacesJournalNX - A Multidisciplinary Peer Reviewed Journal20210 иқтибос
    ABI

  16. Study of the iron distribution profile and the influence of annealing on the structure implanted in silicon

    Б. Э. Эгамбердиев, A. S. Mallayev, Sh. A. Sayfulloev +1

    МақолаSilicon and Solar Cell TechnologiesAIP conference proceedings20210 иқтибос
    ABI

  17. Determining the Effect of Annealing on the Crystal Structure of CoSi2/Si (100) Formed by MBE, SSE and RE Epitaxy Techniques

    Б. Э. Эгамбердиев, A. Sh. Mavlyanov, Sh. A. Sayfulloyev

    БобSemiconductor materials and interfacesBook Publisher International (a part of SCIENCEDOMAIN International)20210 иқтибос
    ABI

  18. HYBRID DISTRIBUTED ENERGY GENERATION SYSTEM

    N. T. Rustamov, Б. Э. Эгамбердиев, O. D. Meirbekova +1

    МақолаHybrid Renewable Energy SystemsEuropean Journal of Technical and Natural Sciences20230 иқтибос
    ABI

  19. STUDY OF THE DISTRIBUTION PROFILE OF ION- IMPLANTED IN SILICON AND INFLUENCE THERMAL ANNEALING ON THE STRUCTYRE OF IRON SILICIDES

    Б. Э. Эгамбердиев, A. S. Mallaev, Shohruh SAYFULLOEV

    МақолаSilicon and Solar Cell TechnologiesŬzMU habarlari.20240 иқтибос
    ABI