Effect of annealing on the crystal structure of the surface of silicon doped with Ni, Fe, and Co ions
Б. Э. ЭгамбердиевTashkent State University, Tashkent, 700095, UzbekistanN. T. RustamovTashkent State University, Tashkent, 700095, UzbekistanA. S. MallaevTashkent State University, Tashkent, 700095, UzbekistanA. M. NorovTashkent State University, Tashkent, 700095, Uzbekistan
ABI
Аннотация
Ion-implanted Ni, Fe, and Co layers in silicon are experimentally investigated. It is established that at certain heat-treatment conditions and irradiation doses so-called epitaxial silicides form on the single-crystal surface, which can work as conductive layers or metal coatings.
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