Асосий контентга ўтиш
AkademIndex

Маҳсулотлар

Ишлаб чиқувчилар учун

AkademBaseЭкотизим учун очиқ API

A. S. Mallaev

6 та иш

Tashkent State University

  1. Effect of annealing on the crystal structure of the surface of silicon doped with Ni, Fe, and Co ions

    Б. Э. Эгамбердиев, N. T. Rustamov, A. S. Mallaev +1

    МақолаSilicon and Solar Cell TechnologiesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20156 иқтибос
    ABI

  2. Obtaining films of CoSi2/Si (100) and the analysis of their morphology and stoichiometry through molecular-beam, solid-phase and reactive epitaxy methods

    Б. Э. Эгамбердиев, B. Ch. Holliev, A. S. Mallaev +2

    МақолаSemiconductor materials and interfacesSurface Engineering and Applied Electrochemistry20070 иқтибос
    ABI

  3. Investigation of profiles of the distribution of ion-implanted Mn atoms using the rutherford back scattering method and the influence of thermal annealing on them

    Б. Э. Эгамбердиев, Б.Ч. Холлиев, A. S. Mallaev

    МақолаIon-surface interactions and analysisSurface Engineering and Applied Electrochemistry20070 иқтибос
    ABI

  4. Study Of The Distribution Profile Of Mechanisms Gland With Implantation Method

    Bakhrom Egamberdievich Egamberdiev, A. S. Mallaev, Shohruh Aamin o’g’li Sayfulloyev

    МақолаCrystallography and Radiation PhenomenaJournalNX - A Multidisciplinary Peer Reviewed Journal20210 иқтибос
    ABI

  5. DISTRIBUTION PROFILES ON THE CRYSTAL STRUCTURE OF THE SURFACE AND AT THE SURFACE OF SILICON DOPED WITH IONS FROM THERMAL ANNEALING OF IRON AND COBALT

    Б. Э. Эгамбердиев, Sh. A. Sayfulloev, A. S. Mallaev

    МақолаSemiconductor materials and interfacesJournalNX - A Multidisciplinary Peer Reviewed Journal20210 иқтибос
    ABI

  6. STUDY OF THE DISTRIBUTION PROFILE OF ION- IMPLANTED IN SILICON AND INFLUENCE THERMAL ANNEALING ON THE STRUCTYRE OF IRON SILICIDES

    Б. Э. Эгамбердиев, A. S. Mallaev, Shohruh SAYFULLOEV

    МақолаSilicon and Solar Cell TechnologiesŬzMU habarlari.20240 иқтибос
    ABI