Influence of Doping with Rare Earth Elements on the Parameters of Silicon Photocells
Аннотация
A technology has been developed for manufacturing solar cells based on silicon doped with impurity atoms of rare-earth elements holmium and gadolinium. It has been established that at a concentration of doping with holmium and gadolinium of 1017 cm–3, the efficiency of solar cells increases on average by 15% relative to the control ones. An increase in the radiation resistance of solar cells based on silicon doped with rare earth elements holmium and gadolinium during irradiation with gamma quanta is shown. Rare-earth elements holmium and gadolinium, introduced into silicon during growth, are present in it in the form of various impurity precipitations and complexes, being electrically inactive, actively interacting with vacancies and residual impurities, reduce the concentration of optically active oxygen and carbon, increasing the thermal and radiation stability of the parameters of the original silicon.