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Surface Engineering and Applied Electrochemistry

Работ: 43

Журнал · ISSN 1068-3755

  1. Photoconductivity of silicon with multicharged clusters of manganese atoms [Mn]4

    М. К. Бахадырханов, Г. Х. Мавлонов, С. Б. Исамов +4

    СтатьяInorganic Fluorides and Related CompoundsSurface Engineering and Applied Electrochemistry2010Цитирований: 10
    ABI

  2. Functional Capabilities of Silicon with Nanoclusters of Manganese Atoms

    M. K. Bakhadirkhanov, С. Б. Исамов, Н. Ф. Зикриллаев +4

    СтатьяSemiconductor materials and interfacesSurface Engineering and Applied Electrochemistry2020Цитирований: 8
    ABI

  3. The effect of silicon-germanium microheterojunctions on the parameters of silicon solar cells

    Б. А. Абдурахманов, Х. М. Илиев, С. А. Тачилин +2

    СтатьяSilicon and Solar Cell TechnologiesSurface Engineering and Applied Electrochemistry2010Цитирований: 7
    ABI

  4. Infrared quenching of photoconduction in silicon with multicharge manganese clusters

    M. K. Bachadyrchanov, С. Б. Исамов, Н. Ф. Зикриллаев +1

    СтатьяSilicon Nanostructures and PhotoluminescenceSurface Engineering and Applied Electrochemistry2013Цитирований: 6
    ABI

  5. Implementation of the Nanostate Phenomenon in Materials Science of Functional Nanocomposites Based on Industrial Polymers

    С. В. Авдейчик, V. A. Goldade, В. А. Струк +2

    СтатьяAdvanced Theoretical and Applied Studies in Material Sciences and GeometrySurface Engineering and Applied Electrochemistry2022Цитирований: 5
    ABI

  6. Development and Creation of a New Class of Graded-Gap Structures Based on Silicon with the Participation of Zn and Se Atoms

    Н. Ф. Зикриллаев, O. B. Tursunov, G. A. Kushiev

    СтатьяSemiconductor materials and interfacesSurface Engineering and Applied Electrochemistry2023Цитирований: 5
    ABI

  7. Interaction of radiation defects with nickel atom clusters in silicon

    Х. М. Илиев, Z.M. Saparniyazova, К. А. Исмайлов +2

    СтатьяGraphite, nuclear technology, radiation studiesSurface Engineering and Applied Electrochemistry2011Цитирований: 5
    ABI

  8. Enhancing the Efficiency of Silicon Solar Cells through Nickel Doping

    Z. T. Kenzhaev, Н. Ф. Зикриллаев, K. S. Ayupov +3

    СтатьяSilicon and Solar Cell TechnologiesSurface Engineering and Applied Electrochemistry2023Цитирований: 4
    ABI

  9. Effect of pressure on the electric properties of passivating coatings based on lead borosilicate glasses

    С. И. Власов, Fayzulla A. Saparov

    СтатьяMaterial Science and ThermodynamicsSurface Engineering and Applied Electrochemistry2011Цитирований: 4
    ABI

  10. Spectra of the energy levels of multicharged nanoclusters of manganese atoms in silicon

    М. К. Бахадырханов, С. Б. Исамов

    СтатьяLaser-Ablation Synthesis of NanoparticlesSurface Engineering and Applied Electrochemistry2011Цитирований: 3
    ABI

  11. Self-Oscillatory Processes in Silicon, Problems and Prospects for Research, and Their Application in Electronics

    Н. Ф. Зикриллаев, M. M. Shoabdurakhimova, K. S. Ayupov +2

    СтатьяSemiconductor Quantum Structures and DevicesSurface Engineering and Applied Electrochemistry2024Цитирований: 3
    ABI

  12. Vibrations of photocurrent induced by IR light in silicon with quantum dots

    Э. У. Арзикулов, И. П. Парманкулов

    СтатьяSilicon Nanostructures and PhotoluminescenceSurface Engineering and Applied Electrochemistry2008Цитирований: 2
    ABI

  13. Electrical discharge machining of nonconductive materials

    А. А. Зарипов, Х. Б. Ашуров

    СтатьяAdvanced Machining and Optimization TechniquesSurface Engineering and Applied Electrochemistry2011Цитирований: 2
    ABI

  14. The Elemental Composition Investigation of Silicon Doped with Gallium and Antimony Atoms

    Х. М. Илиев, S. Koveshnikov, B. O. Isakov +3

    СтатьяSemiconductor materials and interfacesSurface Engineering and Applied Electrochemistry2024Цитирований: 2
    ABI

  15. Codiffusion of Gallium and Phosphorus Atoms in Silicon

    Н. Ф. Зикриллаев, С. Б. Исамов, S. Koveshnikov +2

    СтатьяSilicon and Solar Cell TechnologiesSurface Engineering and Applied Electrochemistry2023Цитирований: 2
    ABI

  16. Effect of Manganese Atoms on the Magnetic Properties of Silicon

    O. E. Sattarov, A. Mavlyanov, A. An

    СтатьяMagnetic Properties of AlloysSurface Engineering and Applied Electrochemistry2023Цитирований: 2
    ABI

  17. Sensitive thermosensors on the basis of highly compensated silicon

    М. К. Бахадырханов, S. A. Valiev, S. S. Nasriddinov +1

    СтатьяGas Sensing Nanomaterials and SensorsSurface Engineering and Applied Electrochemistry2007Цитирований: 2
    ABI

  18. Elaboration of physical fundamentals of nanosized structures on the basis of S++Mn−− and Se++Mn−− molecule formation in silicon lattice

    М. К. Бахадырханов, U. X. Sodikov, Н. Ф. Зикриллаев +1

    СтатьяChalcogenide Semiconductor Thin FilmsSurface Engineering and Applied Electrochemistry2007Цитирований: 1
    ABI

  19. Silicon with Binary GexSi1 – x Compounds

    Н. Ф. Зикриллаев, K. S. Ayupov, N. Narkulov +3

    СтатьяSemiconductor materials and interfacesSurface Engineering and Applied Electrochemistry2024Цитирований: 1
    ABI

  20. The Effect of Gamma Irradiation on the Electrophysical Parameters of Nickel-Doped Silicon Solar Cells

    Z. T. Kenzhaev, Х. М. Илиев, В. Б. Оджаев +6

    СтатьяSilicon and Solar Cell TechnologiesSurface Engineering and Applied Electrochemistry2024Цитирований: 1
    ABI

  21. Surface state density at the semiconductor-glass interface

    Aslan Nasirov

    СтатьяSilicon and Solar Cell TechnologiesSurface Engineering and Applied Electrochemistry2008Цитирований: 1
    ABI

  22. Nonmonotonous capacitance-voltage characteristics in metal-glass-semiconductor structures

    С. И. Власов, Aslan Nasirov, О. О. Маматкаримов +1

    СтатьяSemiconductor materials and devicesSurface Engineering and Applied Electrochemistry2008Цитирований: 1
    ABI

  23. Gettering of gold by samarium and gadolinium in silicon

    D. É. Nazyrov

    СтатьяSilicon and Solar Cell TechnologiesSurface Engineering and Applied Electrochemistry2007Цитирований: 0
    ABI

  24. Obtaining films of CoSi2/Si (100) and the analysis of their morphology and stoichiometry through molecular-beam, solid-phase and reactive epitaxy methods

    Б. Э. Эгамбердиев, B. Ch. Holliev, A. S. Mallaev +2

    СтатьяSemiconductor materials and interfacesSurface Engineering and Applied Electrochemistry2007Цитирований: 0
    ABI

  25. Investigation of profiles of the distribution of ion-implanted Mn atoms using the rutherford back scattering method and the influence of thermal annealing on them

    Б. Э. Эгамбердиев, Б.Ч. Холлиев, A. S. Mallaev

    СтатьяIon-surface interactions and analysisSurface Engineering and Applied Electrochemistry2007Цитирований: 0
    ABI