Nonmonotonous capacitance-voltage characteristics in metal-glass-semiconductor structures
С. И. ВласовNational University of Uzbekistan, Vuzgorodok, Tashkent, 100174, Republic of UzbekistanAslan NasirovNational University of Uzbekistan, Vuzgorodok, Tashkent, 100174, Republic of UzbekistanО. О. МаматкаримовNational University of Uzbekistan, Vuzgorodok, Tashkent, 100174, Republic of UzbekistanM. A. ErgashevaNational University of Uzbekistan, Vuzgorodok, Tashkent, 100174, Republic of Uzbekistan
ABI
Аннотация
The nature of nonmonotonous behavior of high-frequency capacitance-voltage characteristics of metal-glass-semiconductor structures is investigated. It is shown that the nonmonotonous variation in capacitance of metal-glass-semiconductor structures at inverse voltages can be caused by the presence of structure defects of acceptor nature in the glass in the layer adjacent to the glass-semiconductor interface.
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