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Aslan Nasirov

Работ: 14

National University of Uzbekistan, 100176, Tashkent, Uzbekistan

  1. Anisotropy of Negative Magnetoresistance in GaMnAs Epitaxial Layers

    A. S. Gazizulina, Aslan Nasirov, A. A. Nebesniy +2

    СтатьяZnO doping and propertiesSemiconductors2021Цитирований: 3
    ABI

  2. The Influence of Fin Shape on the Amplitude of Random Telegraph Noise in the Subthreshold Regime of a Junctionless FinFET

    M. M. Khalilloev, B. O. Jabbarova, Aslan Nasirov

    СтатьяAdvancements in Semiconductor Devices and Circuit DesignTechnical Physics Letters2019Цитирований: 2
    ABI

  3. The effect of γ-ray radiation on the characteristics of the interface between silicon and lead-borosilicate glass

    П. Б. Парчинский, С. И. Власов, Aslan Nasirov

    СтатьяGlass properties and applicationsSemiconductors2004Цитирований: 1
    ABI

  4. Surface state density at the semiconductor-glass interface

    Aslan Nasirov

    СтатьяSilicon and Solar Cell TechnologiesSurface Engineering and Applied Electrochemistry2008Цитирований: 1
    ABI

  5. Nonmonotonous capacitance-voltage characteristics in metal-glass-semiconductor structures

    С. И. Власов, Aslan Nasirov, О. О. Маматкаримов +1

    СтатьяSemiconductor materials and devicesSurface Engineering and Applied Electrochemistry2008Цитирований: 1
    ABI

  6. On the nature of the mobile charge in passivating coatings based on lead-borosilicate glasses

    С. И. Власов, П. Б. Парчинский, Aslan Nasirov +1

    СтатьяSurface Roughness and Optical MeasurementsTechnical Physics1999Цитирований: 0
    ABI

  7. Slowly relaxing charge in lead borosilicate glass passive coatings studied by isothermal capacitance relaxation

    П. Б. Парчинский, С. И. Власов, Aslan Nasirov

    СтатьяSemiconductor materials and devicesTechnical Physics Letters2001Цитирований: 0
    ABI

  8. Dependence of the surface generation velocity at silicon-(lead borosilicate) glass interface on conditions of nonequilibrium depletion region formation

    P. B. Parchinskiy, Aslan Nasirov, Л. Г. Лигай +2

    СтатьяMaterial Science and ThermodynamicsTechnical Physics Letters2011Цитирований: 0
    ABI

  9. Investigation into the charge-carrier generation processes in MIS structures with lead borosilicate glass-based dielectrics

    П. Б. Парчинский, Л. Г. Лигай, Aslan Nasirov +2

    СтатьяGlass properties and applicationsSurface Engineering and Applied Electrochemistry2012Цитирований: 0
    ABI

  10. Effect of Substrate Temperature on the Physical Properties of ZnхSn1 – хSe Films for Thin-Film Solar Cells

    T.M. Razykov, К. M. Kuchkarov, B. A. Ergashev +4

    СтатьяChalcogenide Semiconductor Thin FilmsApplied Solar Energy2019Цитирований: 0
    ABI

  11. Statistical properties of a periodically modulated radiation in a multimode fibers

    T. Akhmadzhanov, Aslan Nasirov

    СтатьяPhotonic and Optical Devices2019 International Conference on Information Science and Communications Technologies (ICISCT)2019Цитирований: 0
    ABI

  12. Effect of the doping compensation on the photoluminescence spectra of ZnO doped by nitrogen

    P. B. Parchinskiy, A. A. Nebesniy, Aslan Nasirov +4

    СтатьяZnO doping and properties2022Цитирований: 0
    ABI

  13. Anisotropy of Carrier Transport Processes in GaMnAs Grown via Low Temperature Molecular Beam Epitaxy

    A. S. Gazizulina, Aslan Nasirov, P.B. Parchinskiy

    СтатьяZnO doping and properties2022Цитирований: 0
    ABI

  14. Effect of Be Co-Doping on Anisotropy of Magnetoresistance in GaMnAs Epitaxial Layers

    P. B. Parchinskiy, A. S. Gazizulina, Aslan Nasirov

    СтатьяZnO doping and propertiesRussian Physics Journal2023Цитирований: 0
    ABI