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П. Б. Парчинский

Работ: 13

Tashkent State University, Vuzgorodok, Tashkent, 700095, Uzbekistan

  1. Properties of Passivating Coatings Based on Lead Borosilicate Glass

    П. Б. Парчинский, С. И. Власов, U. T. Turgunov

    СтатьяGlass properties and applicationsInorganic Materials2002Цитирований: 6
    ABI

  2. Electronic density of states at the interface between silicon and lead borosilicate glass

    С. И. Власов, П. Б. Парчинский, B. A. Olmatov

    СтатьяSemiconductor materials and interfacesInorganic Materials2000Цитирований: 4
    ABI

  3. The effect of γ-ray radiation on the characteristics of the interface between silicon and lead-borosilicate glass

    П. Б. Парчинский, С. И. Власов, Aslan Nasirov

    СтатьяGlass properties and applicationsSemiconductors2004Цитирований: 1
    ABI

  4. Minority-Carrier Generation at the Interface between Silicon and Lead Borosilicate Glass

    П. Б. Парчинский, С. И. Власов

    СтатьяSemiconductor materials and interfacesRussian Microelectronics2001Цитирований: 1
    ABI

  5. On the nature of the mobile charge in passivating coatings based on lead-borosilicate glasses

    С. И. Власов, П. Б. Парчинский, Aslan Nasirov +1

    СтатьяSurface Roughness and Optical MeasurementsTechnical Physics1999Цитирований: 0
    ABI

  6. The effect of ultrasound on the parameters of metal-dielectric-semiconductor structures

    П. Б. Парчинский, С. И. Власов, Р. А. Муминов +2

    СтатьяEngineering Technology and MethodologiesTechnical Physics Letters2000Цитирований: 0
    ABI

  7. Slowly relaxing charge in lead borosilicate glass passive coatings studied by isothermal capacitance relaxation

    П. Б. Парчинский, С. И. Власов, Aslan Nasirov

    СтатьяSemiconductor materials and devicesTechnical Physics Letters2001Цитирований: 0
    ABI

  8. The effect of γ radiation on the electrical properties of passive coatings based on lead borosilicate glasses

    П. Б. Парчинский

    СтатьяGlass properties and applicationsTechnical Physics Letters2002Цитирований: 0
    ABI

  9. The effect of ultrasonic treatment on the generation characteristics of a Si-SiO2 interface

    П. Б. Парчинский, С. И. Власов, Л. Г. Лигай +1

    СтатьяSilicon and Solar Cell TechnologiesTechnical Physics Letters2003Цитирований: 0
    ABI

  10. Density of states at a gamma-irradiated Si/SiO2 interface: The effect of ultrasonic treatment

    П. Б. Парчинский

    СтатьяIon-surface interactions and analysisRussian Microelectronics2005Цитирований: 0
    ABI

  11. The effect of γ radiation on the temperature dependence of the surface generation velocity at a Si-SiO2 interface

    П. Б. Парчинский, L. G. Ligai, Kh. Zh. Mansurov +1

    СтатьяSilicon Nanostructures and PhotoluminescenceTechnical Physics Letters2005Цитирований: 0
    ABI

  12. Effect of ultrasonic treatment on the generation characteristics of irradiated silicon-silicon-dioxide interface

    П. Б. Парчинский, С. И. Власов, Л. Г. Лигай

    СтатьяSilicon Nanostructures and PhotoluminescenceSemiconductors2006Цитирований: 0
    ABI

  13. Investigation into the charge-carrier generation processes in MIS structures with lead borosilicate glass-based dielectrics

    П. Б. Парчинский, Л. Г. Лигай, Aslan Nasirov +2

    СтатьяGlass properties and applicationsSurface Engineering and Applied Electrochemistry2012Цитирований: 0
    ABI