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П. Б. Парчинский

13 ta ish

Tashkent State University, Vuzgorodok, Tashkent, 700095, Uzbekistan

  1. Properties of Passivating Coatings Based on Lead Borosilicate Glass

    П. Б. Парчинский, С. И. Власов, U. T. Turgunov

    MaqolaGlass properties and applicationsInorganic Materials20026 iqtibos
    ABI

  2. Electronic density of states at the interface between silicon and lead borosilicate glass

    С. И. Власов, П. Б. Парчинский, B. A. Olmatov

    MaqolaSemiconductor materials and interfacesInorganic Materials20004 iqtibos
    ABI

  3. The effect of γ-ray radiation on the characteristics of the interface between silicon and lead-borosilicate glass

    П. Б. Парчинский, С. И. Власов, Aslan Nasirov

    MaqolaGlass properties and applicationsSemiconductors20041 iqtibos
    ABI

  4. Minority-Carrier Generation at the Interface between Silicon and Lead Borosilicate Glass

    П. Б. Парчинский, С. И. Власов

    MaqolaSemiconductor materials and interfacesRussian Microelectronics20011 iqtibos
    ABI

  5. On the nature of the mobile charge in passivating coatings based on lead-borosilicate glasses

    С. И. Власов, П. Б. Парчинский, Aslan Nasirov +1

    MaqolaSurface Roughness and Optical MeasurementsTechnical Physics19990 iqtibos
    ABI

  6. The effect of ultrasound on the parameters of metal-dielectric-semiconductor structures

    П. Б. Парчинский, С. И. Власов, Р. А. Муминов +2

    MaqolaEngineering Technology and MethodologiesTechnical Physics Letters20000 iqtibos
    ABI

  7. Slowly relaxing charge in lead borosilicate glass passive coatings studied by isothermal capacitance relaxation

    П. Б. Парчинский, С. И. Власов, Aslan Nasirov

    MaqolaSemiconductor materials and devicesTechnical Physics Letters20010 iqtibos
    ABI

  8. The effect of γ radiation on the electrical properties of passive coatings based on lead borosilicate glasses

    П. Б. Парчинский

    MaqolaGlass properties and applicationsTechnical Physics Letters20020 iqtibos
    ABI

  9. The effect of ultrasonic treatment on the generation characteristics of a Si-SiO2 interface

    П. Б. Парчинский, С. И. Власов, Л. Г. Лигай +1

    MaqolaSilicon and Solar Cell TechnologiesTechnical Physics Letters20030 iqtibos
    ABI

  10. Density of states at a gamma-irradiated Si/SiO2 interface: The effect of ultrasonic treatment

    П. Б. Парчинский

    MaqolaIon-surface interactions and analysisRussian Microelectronics20050 iqtibos
    ABI

  11. The effect of γ radiation on the temperature dependence of the surface generation velocity at a Si-SiO2 interface

    П. Б. Парчинский, L. G. Ligai, Kh. Zh. Mansurov +1

    MaqolaSilicon Nanostructures and PhotoluminescenceTechnical Physics Letters20050 iqtibos
    ABI

  12. Effect of ultrasonic treatment on the generation characteristics of irradiated silicon-silicon-dioxide interface

    П. Б. Парчинский, С. И. Власов, Л. Г. Лигай

    MaqolaSilicon Nanostructures and PhotoluminescenceSemiconductors20060 iqtibos
    ABI

  13. Investigation into the charge-carrier generation processes in MIS structures with lead borosilicate glass-based dielectrics

    П. Б. Парчинский, Л. Г. Лигай, Aslan Nasirov +2

    MaqolaGlass properties and applicationsSurface Engineering and Applied Electrochemistry20120 iqtibos
    ABI