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С. И. Власов

23 ta ish

Tashkent State University, Vuzgorodok, Tashkent, 700095, Uzbekistan

  1. Properties of Passivating Coatings Based on Lead Borosilicate Glass

    П. Б. Парчинский, С. И. Власов, U. T. Turgunov

    MaqolaGlass properties and applicationsInorganic Materials20026 iqtibos
    ABI

  2. Effect of pressure on the electric properties of passivating coatings based on lead borosilicate glasses

    С. И. Власов, Fayzulla A. Saparov

    MaqolaMaterial Science and ThermodynamicsSurface Engineering and Applied Electrochemistry20114 iqtibos
    ABI

  3. Electronic density of states at the interface between silicon and lead borosilicate glass

    С. И. Власов, П. Б. Парчинский, B. A. Olmatov

    MaqolaSemiconductor materials and interfacesInorganic Materials20004 iqtibos
    ABI

  4. Study of photoluminescence spectra of GaMnAs produced by low-temperature molecular beam epitaxy

    P. B. Parchinskiy, A. Yu. Bobylev, С. И. Власов +2

    MaqolaZnO doping and propertiesSemiconductors20072 iqtibos
    ABI

  5. Effect of ultrasonic treatment on the generation characteristics of a semiconductor-glass interface

    С. И. Власов, A. V. Ovsyannikov, B. N. Zaveryukhin

    MaqolaEngineering Technology and MethodologiesTechnical Physics Letters20092 iqtibos
    ABI

  6. Effect of pressure on the characteristics of Schottky barrier diodes made of overcompensated semiconductor

    С. И. Власов

    MaqolaAdvanced Materials and Semiconductor TechnologiesSemiconductor Physics Quantum Electronics & Optoelectronics20102 iqtibos
    ABI

  7. The effect of γ-ray radiation on the characteristics of the interface between silicon and lead-borosilicate glass

    П. Б. Парчинский, С. И. Власов, Aslan Nasirov

    MaqolaGlass properties and applicationsSemiconductors20041 iqtibos
    ABI

  8. Acoustostimulated changes in the density of surface states and their energy spectrum in p-type silicon single crystals

    N. N. Zaveryukhina, E. B. Zaveryukhina, С. И. Власов +1

    MaqolaIndustrial Engineering and TechnologiesTechnical Physics Letters20081 iqtibos
    ABI

  9. Effect of the semiconductor-insulator interface on the characteristics of the metal-insulator-semiconductor structures

    С. И. Власов, Fayzulla A. Saparov, B.Kh. Kuchkarov

    MaqolaElectric Power Systems and ControlUzbekiston Fizika Zhurnali20091 iqtibos
    ABI

  10. Nonmonotonous capacitance-voltage characteristics in metal-glass-semiconductor structures

    С. И. Власов, Aslan Nasirov, О. О. Маматкаримов +1

    MaqolaSemiconductor materials and devicesSurface Engineering and Applied Electrochemistry20081 iqtibos
    ABI

  11. Effect of heat treatment on the properties of erbium-doped silicon

    С. И. Власов, D. É. Nazyrov, A. A. Iminov +1

    MaqolaSemiconductor materials and interfacesTechnical Physics Letters20001 iqtibos
    ABI

  12. Minority-Carrier Generation at the Interface between Silicon and Lead Borosilicate Glass

    П. Б. Парчинский, С. И. Власов

    MaqolaSemiconductor materials and interfacesRussian Microelectronics20011 iqtibos
    ABI

  13. On the nature of the mobile charge in passivating coatings based on lead-borosilicate glasses

    С. И. Власов, П. Б. Парчинский, Aslan Nasirov +1

    MaqolaSurface Roughness and Optical MeasurementsTechnical Physics19990 iqtibos
    ABI

  14. The effect of ultrasound on the parameters of metal-dielectric-semiconductor structures

    П. Б. Парчинский, С. И. Власов, Р. А. Муминов +2

    MaqolaEngineering Technology and MethodologiesTechnical Physics Letters20000 iqtibos
    ABI

  15. Slowly relaxing charge in lead borosilicate glass passive coatings studied by isothermal capacitance relaxation

    П. Б. Парчинский, С. И. Власов, Aslan Nasirov

    MaqolaSemiconductor materials and devicesTechnical Physics Letters20010 iqtibos
    ABI

  16. The effect of ultrasonic treatment on the generation characteristics of a Si-SiO2 interface

    П. Б. Парчинский, С. И. Власов, Л. Г. Лигай +1

    MaqolaSilicon and Solar Cell TechnologiesTechnical Physics Letters20030 iqtibos
    ABI

  17. Properties of silicon doped by gadolinium and samarium during growth

    Muratali Bazarbaev, С. И. Власов, D.E. Nazirov

    MaqolaSilicon and Solar Cell Technologies20040 iqtibos
    ABI

  18. Effect of pressure on the properties of a silicon-glass interface

    С. И. Власов, M. A. Ergasheva, T. P. Adylov

    MaqolaSemiconductor Quantum Structures and DevicesTechnical Physics Letters20050 iqtibos
    ABI

  19. Effect of ultrasonic treatment on the generation characteristics of irradiated silicon-silicon-dioxide interface

    П. Б. Парчинский, С. И. Власов, Л. Г. Лигай

    MaqolaSilicon Nanostructures and PhotoluminescenceSemiconductors20060 iqtibos
    ABI

  20. The rate of surface generation of charge carriers at the semiconductor-glass interface

    С. И. Власов, A. V. Ovsyannikov

    MaqolaSurface Roughness and Optical MeasurementsSurface Engineering and Applied Electrochemistry20080 iqtibos
    ABI

  21. To study the interface semiconductor-dielectrics centres effect on the state density

    B. Kh. Qochqorov, M. Ehrgasheva, Н. Р. Рахимов +1

    MaqolaSurface and Thin Film Phenomena20100 iqtibos
    ABI

  22. Influence Of Pressure On Creation Macroadenomas Inclusions Of Surface Of Metal-Glass-Semiconductor Structures

    С. И. Власов, О. О. Маматкаримов, A. V. Ovsyannikov +1

    MaqolaNanotechnology research and applications20100 iqtibos
    ABI

  23. Studying influence of titanium and hafnium atoms on characteristics of volume and Si-SiO 2 interface of multilayer structures

    С. И. Власов, Sh.S. Daliev

    MaqolaAdvanced Materials Characterization TechniquesUzbekiston Fizika Zhurnali20110 iqtibos
    ABI