Sh.S. Daliev

2 ta ish

Institute of Applied Physics, National University of Uzbekistan, Tashkent, Uzbekistan

1. Influence of thermal treatment on characteristics of silicon doped by lanthanium

   Sharifa B. Utamuradova, Shakhrukh Kh. Daliev, E. K. Kalandarov +1

   MaqolaSemiconductor materials and interfacesUzbekiston Fizika Zhurnali20060 iqtibos

   ABIABI:AkademIndex/openalex/2006.article.000426

2. Studying influence of titanium and hafnium atoms on characteristics of volume and Si-SiO 2 interface of multilayer structures

   С. И. Власов, Sh.S. Daliev

   MaqolaAdvanced Materials Characterization TechniquesUzbekiston Fizika Zhurnali20110 iqtibos

   ABIABI:AkademIndex/openalex/2011.article.000538