E. K. Kalandarov

2 ta ish

Institute of Applied Physics Research, National University of Uzbekistan, Tashkent, Uzbekistan

1. Features of the behavior of lanthanum and hafnium atoms in silicon

   Sharifa B. Utamuradova, Shakhrukh Kh. Daliev, E. K. Kalandarov +1

   MaqolaSilicon and Solar Cell TechnologiesTechnical Physics Letters20069 iqtibos

   ABIABI:AkademIndex/openalex/2006.article.000051

2. Influence of thermal treatment on characteristics of silicon doped by lanthanium

   Sharifa B. Utamuradova, Shakhrukh Kh. Daliev, E. K. Kalandarov +1

   MaqolaSemiconductor materials and interfacesUzbekiston Fizika Zhurnali20060 iqtibos

   ABIABI:AkademIndex/openalex/2006.article.000426