The rate of surface generation of charge carriers at the semiconductor-glass interface
С. И. ВласовUlugbek National University of Uzbekistan, Studencheskii gorodok, Tashkent, 700174, Republic of UzbekistanA. V. OvsyannikovUlugbek National University of Uzbekistan, Studencheskii gorodok, Tashkent, 700174, Republic of Uzbekistan
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A method was proposed that allows to one to determine the temporal dependence of the rate of the surface generation at the semiconductor-insulator interface. It was shown that the rate of surface generation in metal-insulator-semiconductor (MIS) structures made of n-Si covered by a lead-borosilicate glass was a function of time.
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