A. V. Ovsyannikov

3 ta ish

National University of Uzbekistan, Tashkent, Uzbekistan

1. Effect of ultrasonic treatment on the generation characteristics of a semiconductor-glass interface

   С. И. Власов, A. V. Ovsyannikov, B. N. Zaveryukhin

   MaqolaEngineering Technology and MethodologiesTechnical Physics Letters20092 iqtibos

   ABIABI:AkademIndex/openalex/2009.article.000197

2. The rate of surface generation of charge carriers at the semiconductor-glass interface

   С. И. Власов, A. V. Ovsyannikov

   MaqolaSurface Roughness and Optical MeasurementsSurface Engineering and Applied Electrochemistry20080 iqtibos

   ABIABI:AkademIndex/openalex/2008.article.000317

3. Influence Of Pressure On Creation Macroadenomas Inclusions Of Surface Of Metal-Glass-Semiconductor Structures

   С. И. Власов, О. О. Маматкаримов, A. V. Ovsyannikov +1

   MaqolaNanotechnology research and applications20100 iqtibos

   ABIABI:AkademIndex/openalex/2010.article.000519