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The effect of ultrasonic treatment on the generation characteristics of a Si-SiO2 interface

П. Б. ПарчинскийNational University of Uzbekistan, Tashkent, UzbekistanС. И. ВласовNational University of Uzbekistan, Tashkent, UzbekistanЛ. Г. ЛигайNational University of Uzbekistan, Tashkent, UzbekistanO. Yu. ShchukinaNational University of Uzbekistan, Tashkent, Uzbekistan

Technical Physics Lettersjournal2003en

ABI

Annotatsiya

We have studied the effect of ultrasonic treatment on the generation characteristics of a silicon-silicon dioxide (Si-SiO2) interface obtained by thermal oxidation of the surface of silicon. The ultrasonic treatment leads to a decrease in the surface generation rate and an increase in the generation lifetime of minority charge carriers. These effects are related to a transformation of the defect structure of a transition layer at the Si-SiO2 interface and in the adjacent region of silicon.

Mavzular

Silicon and Solar Cell Technologies Silicon Nanostructures and Photoluminescence Semiconductor materials and interfaces

Identifikatorlar

DOI: 10.1134/1.1579804

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