Effect of heat treatment on the properties of erbium-doped silicon
С. И. ВласовTashkent State University, Tashkent, UzbekistanD. É. NazyrovTashkent State University, Tashkent, UzbekistanA. A. IminovTashkent State University, Tashkent, UzbekistanS. S. KhudaiberdievTashkent State University, Tashkent, Uzbekistan
ABI
Annotatsiya
The effect of thermal treatment on the electrical properties of n-Si doped with the rare-earth element erbium during growth was studied for the first time. Annealing of the erbium-doped samples in air at 900–1200°C for 1–2 h, followed by quenching or slow cooling, leads to inhibition of the high-temperature defects.
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