Effect of ultrasonic treatment on the generation characteristics of irradiated silicon-silicon-dioxide interface
П. Б. ПарчинскийNational Uzbekistan University, Tashkent, 700184, UzbekistanС. И. ВласовNational Uzbekistan University, Tashkent, 700184, UzbekistanЛ. Г. ЛигайNational Uzbekistan University, Tashkent, 700184, Uzbekistan
ABI
Аннотация
The method of relaxation of nonequilibrium capacitance in the metal-oxide-semiconductor structure is used to study the effect of ultrasonic treatment on the generation characteristics of the Si-SiO2 interface irradiated with γ-ray photons. It is found that the generation lifetime decreases under the effect of ultrasonic treatment. It is shown that variations in the generation parameters caused by ultrasonic treatment are radically different in the irradiated and unirradiated structures.
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